ISSN:
1432-0630
Keywords:
68.55
;
79.20
Source:
Springer Online Journal Archives 1860-2000
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
,
Physics
Notes:
Abstract A Monte-Carlo computer program which is composed of ion implantation simulation and deposition calculation is described. It is applied to study TiN film growth by reactive ion-beam assisted deposition in a N2 gas environment. The relationship between film composition and nitrogen partial pressure in the processing chamber is established. The influence of ion energy, atomic arrival rate ratio and ion species on the thickness of the film is studied. We also investigated the intermixing at the interface region between the film and substrate. The calculated data are compared with experimental results.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/BF00331405
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