Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
64 (1994), S. 904-906
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
N-doped p-type ZnMgSSe was grown by molecular beam epitaxy. Nitrogen was induced by electron cyclotron resonance plasma. The maximum net acceptor concentration (NA−ND) and the activation energy of the nitrogen acceptor (EN) depend on the band-gap energy of ZnMgSSe. With increasing band-gap energy, the maximum NA-ND is decreased and EN is increased. The maximum NA-ND and the EN of ZnMgSSe with a band-gap energy of 3.05 eV at 77 K are 2.5×1016 cm−3 and 140 meV, respectively.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.110991
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