Library

feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
Filter
  • Articles: DFG German National Licenses  (13)
  • Electronic Resource  (13)
  • 1985-1989  (13)
Source
  • Articles: DFG German National Licenses  (13)
Material
  • Electronic Resource  (13)
Years
Year
Keywords
  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 2406-2418 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Organic-on-inorganic (OI) contact barrier devices have been applied to the study of InP and In0.53Ga0.47As surfaces. The characteristics of these devices differ from OI diodes fabricated using Si or Ge substrates in that the contact barriers for InP-based devices are relatively small (≤0.55 eV), and the diode characteristics are governed by a high density of states at the organic/inorganic interface. We present current-voltage and frequency-dependent admittance-voltage characteristics for OI diodes employing 3,4,9,10 perylenetetracarboxylic dianhydride (PTCDA) and related compounds as the organic thin-film material. Analysis of characteristics using a theory presented previously [S. R. Forrest and P. H. Schmidt, J. Appl. Phys. 59, 513 (1986)] indicates that the surface state density is (i) independent of the organic material employed, and (ii) sensitive to the exposure of the surface to chemical treatment prior to the organic thin-film deposition. Using techniques derived previously, we determine the magnitude and energy distribution of the density of states at InP and In0.53Ga0.47As surfaces. It is found that the densities of states can vary between mid-1011 and 1015 cm−2 eV−1, depending on the surface treatment employed. Furthermore, some surface treatments result in an organic/In0.53Ga0.47As barrier height that is strongly dependent on applied voltage due to the presence of a high density of interface states.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 867-870 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thin films of the organic compound 3,4,9,10-perylenetetracarboxylic dianhydride (PTCDA) were deposited on n- and p-type GaAs substrates, and were found to form high contact barriers. Barrier energies of 0.64 eV on n-type substrates and 0.75 eV on p-type material yielded organic-on-inorganic (OI) contact barrier diodes characterized by exponentially increasing forward current with voltage, and a reverse dark current leakage limited by generation and recombination of carriers in the GaAs bulk. The Fermi level does not appear to be pinned at the OI interface, contrary to what is commonly observed in metal/GaAs Schottky barrier diodes. In addition, we have made OI contact barriers using N,N'-dimethyl 3,4,9,10-perylenetetracarboxylic diimide (DIME-PTCDI) deposited on n- and p-type GaAs. These devices have contact barriers of 0.85 eV for substrates of either majority-carrier-type. The n values obtained from the forward biased characteristics of the GaAs/DIME-PTCDI structures are n=1.19, and are the lowest obtained to date for OI devices.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 3
    ISSN: 1520-5835
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 4
    Electronic Resource
    Electronic Resource
    Palo Alto, Calif. : Annual Reviews
    Annual Review of Materials Research 17 (1987), S. 189-217 
    ISSN: 0084-6600
    Source: Annual Reviews Electronic Back Volume Collection 1932-2001ff
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 2892-2895 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We discuss a new technique for measuring the net carrier concentrations, layer thicknesses, and deep level spectra of epitaxial InP and related compounds used in photonic device applications. The technique involves the formation of an organic-on-inorganic (OI) semiconductor contact barrier by vacuum sublimation of the compound: 3, 4, 9, 10-perylenetetracarboxylic dianhydride onto an inorganic semiconductor wafer. The OI barriers are reproducible from wafer to wafer, and can be as high as φBn ≈0.55 V over the entire range of InGaAs (P) compounds lattice matched to InP. High voltages ((approximately-greater-than)100 V in some cases) can be applied to the small area OI devices (as defined by an ohmic contact pad deposited on the organic film), allowing for deep depletion. Thus, high resolution carrier concentration measurements over extensive distances in all three wafer dimensions are obtained. These data are used to derive both the doping levels and layer thickness contours over the crystal surface. Finally, the OI devices can be removed after wafer evaluation, and the wafer can then undergo processing into conventional devices with no apparent degradation of performance when compared with control wafers that have not undergone OI diode evaluation.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 6
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 83 (1985), S. 480-485 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The crystalline 1:1 complex naphthalene:octafluoronaphthalene has been investigated at high pressure under ambient temperature, and down to 10 K at ambient pressure, by Raman spectroscopy. The complex is stable in the pressure range studied, 1 to 80 kbar. The lattice mode frequencies show a strong positive pressure dependence, while the internal modes are only weakly affected. The temperature and pressure dependencies of the phonon frequencies suggest that the bonding interaction between the molecular partners is of the usual van der Waals type, and the results are in agreement with the "sublattice'' model proposed by Chen and Prasad. The mode Grüneisen γi's have been obtained from the pressure data. From the measured (∂ν/∂T)p and (∂ν/∂P)T, the "explicit,'' "implicit'' contributions have been extracted.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 7
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 82 (1985), S. 1682-1687 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The effect of pressure on the optical absorption and Raman spectra of 1,4,5,8-naphthalenetetracarboxylic dianhydride (NTCDA) and on the optical absorption edge in 3,4,9,10-perylenetetracarboxylic dianhydride (PTCDA) was investigated, using a diamond anvil cell. In NTCDA the absorption edge shifts red by about 8000 cm−1 in the range 0–180 kbar and in PTCDA by about 3000 cm−1 in the range 0–60 kbar pressure. At the upper limit of pressure the materials turn black, but on release of pressure the shifts were perfectly reversible. In the case of NTCDA, where both absorption and Raman data (up to 70 kbar) were obtained, the shift in the electronic absorption has been related to a parameter proportional to the intermolecular force constant. The latter was obtained from the pressure shift of an external mode Raman frequency, which showed the largest pressure dependence. The shift, which is nonlinear with pressure, becomes linear when plotted against the square of this frequency, normalized to its ambient pressure value [ν(p)/ν(0)]2. To our knowledge, this is the first time a combined absorption and Raman study has been performed on an organic system to establish such a direct relationship between electronic absorption and intermolecular interaction. No pressure-induced phase transition was encountered in NTCDA up to 180 kbar and in PTCDA up to 60 kbar, the limits of pressure in the present study. Earlier explanations for the pressure-induced red shifts in aromatic systems are briefly discussed.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 8
    ISSN: 1600-0765
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: The use of bone-seeking radiopharmaceutical uptake as an indicator of “active” alveolar bone loss was assessed in six beagle dogs. Periodontal surgery was performed in one-half of the mouth in each dog in an attempt to assure a range of rates of bone loss in these animals. Radiographic and bone-seeking radiopharmaceutical uptake measurements were taken prior to treatment and during a nine month post-treatment period. A single measurement of uptake was compared to the rate of bone loss determined from repeated radiographs taken over a six month period subsequent to the uptake examination. Bone-seeking radiopharmaceutical uptake was an accurate indicator of “active” bone loss as measured radiographically six months later in 83.7% of the teeth studied.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 9
    Electronic Resource
    Electronic Resource
    Oxford, UK : Blackwell Publishing Ltd
    Journal of periodontal research 21 (1986), S. 0 
    ISSN: 1600-0765
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: The effect of the non-steroidal anti-inflammatory drug flurbiprofen on the progression of periodontal disease was studied in 12 beagle dogs over a 2-yr period. Standardized radiographs were used to measure the rate of bone loss; bone-seeking radiophormaceutical uptake was used to assess the effect on bone metabolism, and gingival inflammation was scored. Following a 6-month pretreatment baseline period. 6 dogs were dosed daily with 0.02 mg/kg flurbiprofen for a 12-month treatment period. Also, one side of the mouth in each dog was treated with periodontal flap surgery at the beginning of the treatment period. After 12 months, flurbiprofen was discontinued and the dogs were studied for a 6-month post-treatment period. In flurbiprofen-treated dogs the rate of bone loss was significantly decreased about both surgically and non-surgically treated teeth throughout the 12-month treatment period. This decreased rate was sustained through 3 months of the post-treatment period, but was lost 6 months following the termination of flurbiprofen therapy. No similar effect on reducing the rate of bone loss was observed in the placebo-treated dogs. A significant decrease in bone-seeking radiopharmaceutical uptake was observed in the flurbiprofen-treated teeth, which corresponded with the radiographic findings. Changes in gingival inflammation with flurbiprofen treatment were not observed. These data indicate that flurbiprofen is a potent inhibitor of alveolar bone loss in beagles and within 6 months of the termination of flurbiprofen the effect on slowing the rate of bone loss is lost.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 10
    ISSN: 1432-0630
    Keywords: 42.30 ; 64.70 ; 78.65
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Vacuum sublimed thin films of the blue dye hydrogen phthalocyanine (H2Pc) were incorporated into various optical recording structures. The dye was shown to be thermally, hydrolytically, and oxidatively stable. In all cases, the writing mechanisms are dependent on the sublimation of H2Pc. Several recording structures which take advantage of the sublimation property of H2Pc are demonstrated, including pit forming and bubble forming media. These H2Pc-based optical recording structures show very high optical contrast and low writing threshold energies. In addition, very thin films (50–75Å) of H2Pc were incorporated into a tellurium-based medium, which significantly enhanced the writing contrast observed in that medium.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...