Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
58 (1985), S. 1515-1518
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Both epitaxial tetragonal and hexagonal WSi2 (t-WSi2 and h-WSi2) were grown locally on (111)Si. The best epitaxy was obtained in 600–1100 °C two-step annealed samples. The orientation relationships between t-WSi2 and Si are [110]WSi2(parallel)[111]Si and (004)WSi2(parallel)(2¯02), whereas those between h-WSi2 and Si are [0001]WSi2(parallel)[111]Si and (202¯0)WSi2(parallel)(202¯)Si. Interfacial dislocations, 80 A(ring) in spacing, were identified to be of edge type with (1/6)〈112〉 Burgers vectors. Two step annealings were found to be effective in improving the epitaxy and relieving the island formation of WSi2 on Si. Significant intermixing of W and Si atoms during the preannealing is proposed to account for the effects.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.336308
Permalink
| Library |
Location |
Call Number |
Volume/Issue/Year |
Availability |
