Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
58 (1991), S. 1653-1655
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The diffusion profiles of vanadium in silicon have been investigated. In the temperature range 950–1200 °C an in-depth profile measurement by deep level transient spectroscopy was used, and in the temperature range 600–800 °C an annealing experiment which employed a technique for profiling the concentration of deep levels within a depletion region was used. From the two kinds of concentration-profile measurements, the diffusion coefficient of interstitial vanadium in silicon was determined, and it is represented by the expression DV= 9.0×10−3 exp(−1.55/kT) cm2 s−1.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.105154
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