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  • Articles: DFG German National Licenses  (29)
  • 1995-1999  (21)
  • 1990-1994  (7)
  • 1960-1964  (1)
  • 1
    Electronic Resource
    Electronic Resource
    Influence of iodine implantation on the properties of polypropylene (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 61 (1992), S. 1168-1170 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The implantation of iodine atoms into polypropylene and the related changes of substrate physicochemical properties have been studied by means of optical spectroscopy, by the Rutherford backscattering technique and by the measurement of substrate surface energy. Iodine atoms are not chemically bonded in the polymer. During the ion implantation, carbonyl groups and conjugated double bonds are created in the polymer and its surface polarity is increased. The latter effect is more pronounced for the implantation of heavier I+ ions than for F+ ion implantation. After ion implantation, the electrical conductivity of the polypropylene is increased by eight orders of magnitude.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.107635
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Ga penetration into polymers (1999)
    Springer
    Applied physics 68 (1999), S. 357-358 
    Details
    ISSN: 1432-0630
    Keywords: PACS: 68.35.Fx; 68.45.-v
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/s003390050903
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  • 3
    Electronic Resource
    Electronic Resource
    Tomographic study of the three-dimensional distribution of a high-fluence implant in a polymer (1999)
    Springer
    Applied physics 68 (1999), S. 429-434 
    Details
    ISSN: 1432-0630
    Keywords: PACS: 61.72.Hh; 61.72.Ww; 61.80.Jh; 66.30.Jt; 79.20.Wc
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: 6 Li+ ions were implanted into PMMA at high flux up to fluences of 1×1015 cm-2 under angles of 0° to 70° towards the surface normal. The Li depth distributions were determined by means of neutron depth profiling, and compared with theoretical simulations. The three-dimensional Li distribution was reconstructed from the one-dimensional depth profiles by means of a tomographic technique. It turned out that the measured Li depth distributions can be described by a superposition of Gaussian and exponential functions. This points at considerable Li mobility during or after the ion implantation, with trapping in unsaturable traps in the ion-irradiated region which roughly follow the electronic energy transfer distribution. The Li redistribution is more pronounced along the track direction than transversely to it. The normalized Li distributions in various implantation directions were fed into our tomographic program to reconstruct the three-dimensional distribution of the deposited lithium. As expected, the lithium preferentially distributes along the ion tracks. This work is another hint that mobility of implanted ions in solids does not proceed isotropically, but is strongly influenced by the radiation-damage distributions.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/s003390050918
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    Paper (German National Licenses)
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  • 4
    Electronic Resource
    Electronic Resource
    Cross section for 160° elastic scattering of 1.4–2.4 MeV protons from nitrogen and titanium (1991)
    Springer
    Czechoslovak journal of physics 41 (1991), S. 921-928 
    Details
    ISSN: 1572-9486
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract Differential elastic scattering cross sections for 1·4–2·4 MeV protons from natural nitrogen and titanium were measured at laboratory scattering angle 160°. The present cross section data are tabulated for later use in backscattering analyses. Our results for nitrogen are in qualitative agreement with previous data taken at slightly different scattering angles. The cross sections of titanium agree with theoretical Rutherford values within experimental errors. Examples of recent analytical applications of proton backscattering are given.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01598965
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  • 5
    Electronic Resource
    Electronic Resource
    Nanotomographic examinations of ion tracks in cellulose nitrate by ion energy loss spectrometry (1999)
    Springer
    Applied physics 68 (1999), S. 87-91 
    Details
    ISSN: 1432-0630
    Keywords: PACS: 02.90.+p; 61.41.+e; 61.80.Jh; 82.30.Lp
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/s003390050858
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  • 6
    Electronic Resource
    Electronic Resource
    Mechanism of conductivity in metal-polymer-metal structures (1999)
    Springer
    Applied physics 68 (1999), S. 479-482 
    Details
    ISSN: 1432-0630
    Keywords: PACS: 72.20.-i; 73.40.Rw; 73.60.Hy
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/s003390050928
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  • 7
    Electronic Resource
    Electronic Resource
    Electrical properties of Au–polystyrene–Au submicron structures (1998)
    Springer
    Applied physics 67 (1998), S. 503-505 
    Details
    ISSN: 1432-0630
    Keywords: PACS: 72.20.-i; 73.60.Ay
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/s003390050811
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  • 8
    Electronic Resource
    Electronic Resource
    Oxygen incorporation in polyethylene and polypropylene implanted with F+, As+ and I+ ions at high dose (1994)
    Springer
    Applied physics 58 (1994), S. 349-352 
    Details
    ISSN: 1432-0630
    Keywords: 61.80.Jh ; 61.40.Km
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Samples of PolyPropylene (PP) and PolyEthylene (PE) implanted with 150 keV F+, As+ and I+ ions with a dose of 1×1015 cm−2 were studied using standard Rutherford Back Scattering (RBS) technique. No fluorine atoms above the present RBS detection limit were observed in the ion-implanted polymers. The measured depth profiles of As and I atoms are significantly broader than those predicted by the TRIM code for pristine polymers. The differences can be explained by stepwise polymer degradation due to ion bombardment. Massive oxidation of the ion-implanted polymers is observed. The oxidation rate and the resulting oxygen depth profile depend strongly on the polymer type and implanted ion mass. In the samples implanted with F+ ions, an uniformly oxidized layer is built up with a mean oxygen concentration of 15 at.%. In the samples implanted with As+ and I+ ions, a non-uniform oxygen depth distribution is observed with two concentration maxima on the sample surface and in a depth correlated with implanted ion range.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00323608
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  • 9
    Electronic Resource
    Electronic Resource
    Precipitation of dissolved alkali salts and fullerenes on surfaces of doped porous matter (1996)
    Springer
    Applied physics 62 (1996), S. 191-195 
    Details
    ISSN: 1432-0630
    Keywords: 81.35 ; 66.30 ; 81.30 ; 61.46
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Standard porcelain samples burnt at different temperatures were doped with LiCl, organo-Li solutions, or with fullerene solution and then dried. The depth profiles of both Li and fullerene were determined. The distributions of the incorporated dopants strongly depend on the samples' porosity. Additional ultrasonic treatment during the diffusion process has a fatal influence on the porcelain structure, resulting in enhanced dopant uptake of the remaining sample. The surface-near shape of the depth profiles is interpreted by solvation, i.e., by precipitation of the dissolved salts or fullerenes in the surface-near zone during the drying process. It is shown that the solvation effect is important only in the case of media with high porosity.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01575080
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    Paper (German National Licenses)
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  • 10
    Electronic Resource
    Electronic Resource
    Boron electrical activation in dual B+ + N+ + and B+ + Ar+ ion-implanted silicon (1996)
    Springer
    Applied physics 62 (1996), S. 355-358 
    Details
    ISSN: 1432-0630
    Keywords: 61.80.Jh ; 73.25
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Silicon wafers were implanted with 40 keV B+ ions and then with 50 keV N+ or 100 keV Ar+ ions to doses from 1.2 x 1014 to 1.2 x 1015 cm−2. The implanted samples were studied using the Hall effect and standard van der Pauw methods. The dependences of the sheet resistivity and the sheet concentration of charge carriers on the annealing temperature in the range from 700 to 1300 K were obtained. Models describing the influence of additional implantation of nitrogen and argon ions on the process of boron electrical activation during annealing are proposed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01594233
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