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  • 1
    Electronic Resource
    Electronic Resource
    A low cost remotely operable cutting machine for segmenting metal clad ceramic fuel pellets (1997)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 68 (1997), S. 1618-1619 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: Cutting of irradiated zircaloy metal clad ceramic fuel pellets requires a special cutting saw that can be remotely operated. The remote operation is essential because of the pyrophoric nature of zircaloy metal and high radiation field associated with the irradiated fuel elements. Conventional saws cannot meet the operational requirements because these are not readily amenable for remote operation and maintenance. Hence we have developed a new laboratory scale cutting saw for cutting radioactive samples remotely. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1147936
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  • 2
    Electronic Resource
    Electronic Resource
    Oxidation state and superconducting properties of Y1−xPrxSr2Cu2.85Re0.15O7+δ (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 6884-6887 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Superconductivity exists in orthorhombic Y1−xPrxSr2Cu2.85Re0.15O7+δ up to a critical concentration (xcr) of 0.65. A progressive decrease in Tc occurs as x increases from 0 to 0.65. A further increase in x leads to a tetragonal transformation and as a consequence the Tc vanishes; however, the orthorhombicity of these Sr-based compounds is much lower than that observed for the Ba analog, Y1−xPrxBa2Cu3O7−δ and, hence, the Tc. On the one hand, crystal chemistry correlations indicate that the Pr ion is in trivalent state while on the other hand, the stabilizing cation, viz., Re, is in hexavalent state which accounts for the excess oxygen (〉7.0) in the system. The high xcr value of the Sr series compared to the Ba series (xcr=0.55) is attributed to the much reduced orbital overlap of the trivalent Pr(4f ) state with the Cu(3dx2−y2)–O(2p) conduction band, via hole localization and/or pair breaking, and is not due to the much discussed hole filling by tetravalent Pr. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363758
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  • 3
    Electronic Resource
    Electronic Resource
    Photoreflectance and photoluminescence spectroscopy of low-temperature GaAs grown by molecular-beam epitaxy (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 427-432 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photoreflectance (PR) and photoluminescence (PL) measurements have been carried out on low-temperature GaAs (LT GaAs) and LT-GaAs/AlGaAs modulation-doped photodetector (MODPD) structures grown by molecular-beam epitaxy. Samples with LT GaAs grown at 350 °C show several PL lines associated with (i) transitions involving two-dimensional electron gas in LT GaAs near the interface, (ii) band-edge transitions in the bulk LT GaAs, and (iii) transitions involving deep level defect complexes in LT GaAs. In addition a PL emission band at 1.65 eV observed in all the MODPD structures is attributed to a crossover transition at the LT-GaAs/AlGaAs interface. PR spectra of these modulation-doped structures show Franz–Keldysh oscillations which are attributed to high electric fields ((approximately-greater-than)105 V/cm) at the LT-GaAs/AlGaAs interface. PR measurements on bare LT-GaAs layers suggest that the E0 transition in LT GaAs is about 20 meV above that of the normal GaAs E0 gap. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360848
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  • 4
    Electronic Resource
    Electronic Resource
    Photoluminescence from modulation doped AlGaAs/ low-temperature molecular beam epitaxy-grown GaAs heterostructures (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 1210-1213 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photoluminescence (PL) results from a novel modulation doped AlGaAs/ low-temperature molecular beam epitaxially-grown-GaAs (LT-GaAs MODFET) heterostructure are reported. A new PL line at 1.65 eV is consistently observed in all the LT-GaAs MODFET structures investigated. A spatially indirect transition from a two-dimensional electron gas at the heterojunction interface to the holes in AlGaAs is believed to be responsible for the observed 1.65 eV PL line. LT-GaAs MODFET structures in which LT-GaAs region is grown at 350 °C show additional lines lying in the band edge region as well as deep inside the band gap region of LT-GaAs. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360359
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  • 5
    Electronic Resource
    Electronic Resource
    Alloy broadening of the emission barrier of the DX center in aluminum gallium arsenide (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 145-147 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of alloy fluctuations on the emission barrier of the DX center in aluminum gallium arsenide (AlGaAs) is studied by constant capacitance deep level transient spectroscopy using Si-doped and Sn-doped samples grown by different growth techniques. All the samples showed single broadened peaks which were analyzed by assuming a Gaussian distribution for the emission barrier. The full width at half maximum for the emission barrier spread was found to be the same (∼0.05+0.005 eV) for all the samples and is of the same order as the reported capture barrier spread for Si-doped AlGaAs, which strongly suggests that the binding energy spread of the DX center in AlGaAs is very small.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101211
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  • 6
    Electronic Resource
    Electronic Resource
    Frequency dependence of response of the DX center in AlGaAs and its influence on the determination of the band discontinuity of GaAs/AlGaAs heterojunctions (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 1211-1214 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An analysis to simulate the apparent carrier profiles of n-N heterojunctions obtained from capacitance-voltage measurements is presented. The analysis takes into account the partial ionization and the frequency dependence of the response of deep donors, if any, present in the N material. In the case of GaAs/AlGaAs heterojunctions, the latter effect has not been included in the previous analyses but appears to be important since the reciprocal time constant of the Si-related DX centers in AlGaAs at room temperature seems to be comparable to the frequency of the test signal (1 MHz) normally used for capacitance measurements.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341887
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  • 7
    Electronic Resource
    Electronic Resource
    Influence of test signal frequency on the determination of band discontinuity of GaAs/AlGaAs heterojunctions from capacitance-voltage measurements (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 1552-1554 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have simulated the effects of deep donors in AlGaAs (DX centers) in the determination of band discontinuity (ΔEc) of GaAs/AlGaAs heterojunctions using the capacitance-voltage measurements. In addition to the partial ionization of the deep donors, the ability of the traps (deep donors) to respond to the test signal used for capacitance measurement has also been included in the analysis. We find that the deep-level effects lead to an underestimation or overestimation of ΔEc, depending upon whether the frequency of the test signal is low or high, respectively, as compared to the emission rate of the traps.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341832
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  • 8
    Electronic Resource
    Electronic Resource
    Stabilization of a superconducting TbSr2Cu2.85Re0.15O7+δ compound and the valence state of terbium (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 2711-2713 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A single-phase Sr-based Tb-123 phase has been synthesized by chemical stabilization. TbSr2Cu2.85Re0.15O7+δ exhibits superconductivity at Tc,zero=22 K. X-ray diffraction results suggest a relatively small orthorhombicity and neutron diffraction studies indicate an excess oxygen content (≥7.2) in the sample. Tb is present as a trivalent ion in the superconducting phase as derived from x-ray photoelectron spectroscopy. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114301
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  • 9
    Electronic Resource
    Electronic Resource
    Band-edge photoluminescence from pseudomorphic Si0.96Sn0.04 alloy (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 3105-3107 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Band-edge related photoluminescence from a strained Si0.96Sn0.04 alloy grown by molecular beam epitaxy on Si(100) substrate has been seen for the first time. We report band-edge related photoluminescence from a compressively strained pseudomorphic Si0.96Sn0.04 alloy. The luminescence observed consisted of two dominant features, a well-resolved band-edge luminescence consisting of a no-phonon and a transverse optical phonon replica, and a deep-level broad luminescence peak around 770 meV. The band-edge feature is attributed to a no-phonon free excitonic recombination in the binary alloy and exhibits a near linear power dependence. We also observe a red shift of the energy gap of Si0.96Sn0.04 alloy with respect to Si, which corresponds to the bulk alloy effect. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116437
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  • 10
    Electronic Resource
    Electronic Resource
    Lattice engineered compliant substrate for defect-free heteroepitaxial growth (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 1685-1687 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Presented here is proof-of-principle that a thin single crystal semiconductor film—when twist-wafer bonded to a bulk single crystal substrate (of the same material)—will comply to the lattice constant of a different single crystal semiconductor thick film grown on its surface. In our experiment, a 100 Å film of GaAs was wafer bonded to a GaAs bulk substrate, with a large twist angle between their 〈110〉 directions. The resultant twist boundary ensures high flexibility in the thin film. Dislocation-free films of In0.35Ga0.65P(∼1% strain) were grown with thicknesses of 3000 Å, thirty times the Matthews–Blakeslee critical thickness, on twist-wafer-bonded films of GaAs. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.118669
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