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  • Articles: DFG German National Licenses  (87)
  • 1995-1999  (81)
  • 1955-1959  (6)
  • 1
    Electronic Resource
    Electronic Resource
    Microdetermination of Phosphorus (1956)
    s.l. : American Chemical Society
    Analytical chemistry 28 (1956), S. 1756-1758 
    Details
    ISSN: 1520-6882
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/ac60119a033
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Deuterium transport through device structures (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 2237-2244 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We use secondary ion mass spectrometry to characterize the hydrogen/deuterium distribution and concentration on complimentary "metal" oxide silicon (CMOS) test structures subjected to molecular deuterium (D2) anneals. We examine the temperature dependence and the influence of doping on the transport of deuterium to the gate oxide interfaces resulting in interface passivation. We find that undoped polycrystalline silicon appears to be an efficient barrier for deuterium transport at typical postmetallization sintering temperatures. We also examine the permeability of device structures that include dielectric encapsulation layers after typical postmetal sintering conditions employed in a conventional CMOS process flow. It is found that typical low temperature deposited oxide dielectrics are quite permeable by molecular deuterium at typical sintering temperatures (435 °C). In contrast, chemical vapor deposited silicon nitride dielectrics appear to form a complete barrier to deuterium diffusion (even for layers as thin as 300 Å). We also find that nitrides which receive a high thermal budget exposure, such as the source/drain anneal, appears to regain permeability to deuterium diffusion/transport. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.371036
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  • 3
    Electronic Resource
    Electronic Resource
    Nanosecond hard x-ray source for time resolved x-ray diffraction studies (1995)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 66 (1995), S. 5214-5217 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: We describe an optically driven x-ray diode which can generate nanosecond, hard x-ray pulses at a repetition rate of 300 Hz, with high stability and a synchronization capability of 1–2 ns. The system is suitable for nanosecond time resolved diffraction experiments. Using this system diffraction patterns from liquids and polycrystalline solids were recorded. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1146086
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    Paper (German National Licenses)
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  • 4
    Electronic Resource
    Electronic Resource
    ON THE MECHANISM OF ACTION OF PARATHORMONE1 (1956)
    s.l. : American Chemical Society
    Journal of the American Chemical Society 78 (1956), S. 3863-3864 
    Details
    ISSN: 1520-5126
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/ja01596a089
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    Paper (German National Licenses)
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  • 5
    Electronic Resource
    Electronic Resource
    Growth of giant magnetoresistance spin valves using Pb and Au as surfactants (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 5183-5191 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have investigated the use of Pb and Au as surfactants in an attempt to achieve smoother and sharper interfaces in three types of giant magnetoresistance (GMR) spin valve multilayers: symmetric spin valves, bottom spin valves, and top spin valves. The coupling fields are reduced by a factor of 10 for symmetric and bottom spin valves and by a factor of 3 for top spin valves, presumably by suppressing roughness and interdiffusion at the Co/Cu/Co interfaces, when ∼1 monolayer of Pb is deposited in the early stages of spin valve growth. The Pb has a strong tendency to float out or segregate to the surface during deposition of the spin valve leaving the GMR largely unaltered. Au is almost as effective as Pb, however the Au tends to be left behind in the spin valve, and the GMR is reduced slightly. Attempts to use Hg as a surfactant were unsuccessful. The coupling field increased, and the GMR decreased sharply. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363460
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  • 6
    Electronic Resource
    Electronic Resource
    Selective compositional mixing in GaAs/AlGaAs superlattice induced by low dose Si focused ion beam implantation (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 5616-5624 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The Al-Ga interdiffusion induced by Si focused ion beam implantation and subsequent rapid thermal annealing (RTA) was investigated in an Al0.3Ga0.7As/GaAs superlattice structure with equal 3.5 nm barrier and well widths. Si++ was accelerated to either 50 or 100 kV and implanted parallel to sample normal at doses ranging from 1013 to 1015/cm2. The effect of rapid thermal anneal of 10 s at 950 °C was characterized by the secondary ion mass spectrometry technique. In the implanted region, the interdiffusion causing compositional mixing was significantly enhanced by the Si implantation. An ion dose as low as 1×1014/cm2 results in a two-order of magnitude increase in the interdiffusion coefficient, to a value of 4.5×10−14 cm2/s, producing a mixing effectiveness of ∼90%. In contrast, the RTA-only case produces an interdiffusion coefficient of 1.3×10−16 cm2/s and very little mixing. A strong depth dependence of the mixing process was observed at 100 keV implantation energy, with a "pinch-off'' (more heavily mixed) region being formed at a certain depth. It is noticed that the depth where this enhancement occurred is not associated with either the maximum concentration of Si ions or of vacancies. Instead, it coincides with the positive maximum of the second derivative of the vacancy profile, which in turn represents a maximum in the vacancy injection generated by the presence of a transient vacancy concentration gradient. Based on these findings, a theoretical model was developed using vacancy injection as responsible for mixing. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359203
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  • 7
    Electronic Resource
    Electronic Resource
    The trade-off between large magnetoresistance and small coercivity in symmetric spin valves (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 8603-8606 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have investigated the use of various alloys as substitutes for pure Co in the center film of symmetric spin valves of the type NiO/Co/Cu/Co/Cu/Co/NiO. The aim of this work is to identify magnetic materials that exhibit smaller coercivities than pure Co for the center or "valve'' film but which retain much of the giant magnetoresistance associated with a pure Co film. The materials investigated include Co95Fe5, Co90Fe10, Ni80Fe20, Co86Fe10.5Ni3.5, and Co85B15. It appears that each of these alloys scatters electrons more strongly than does pure Co as they cross the center film. This scattering degrades the dual spin-valve effect, which is the primary advantage of the symmetric spin valve. As a result, a tradeoff exists between large GMR and small coercivity when using these materials. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362457
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  • 8
    Electronic Resource
    Electronic Resource
    Optimizing the giant magnetoresistance of symmetric and bottom spin valves (invited) : The 40th annual conference on magnetism and magnetic materials (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 5277-5281 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have attempted to optimize the values of the giant magnetoresistance in symmetric spin valves of the type NiO/Co/Cu/Co/Cu/Co/NiO (achieving 23.4%) and in bottom spin valves of the type Co/Cu/Co/NiO (achieving 17.0%), the largest values ever reported for such structures. The key elements in this achievement are improved vacuum conditions and careful attention to the film thicknesses. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361352
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  • 9
    Electronic Resource
    Electronic Resource
    Growth of giant magnetoresistance spin valves using indium as a surfactant (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 2491-2496 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have investigated the use of In as a surfactant to achieve smoother interfaces in spin-valve multilayers of the general type: FeMn/Ni80Fe20/Co/Cu/Co/Ni80Fe20/glass. The coupling field is reduced from ∼0.8 to ∼0.3 mT, presumably by suppressing roughness at the Co/Cu/Co interfaces, when 0.5–1.0 nm In is deposited on the first Co film just prior to Cu deposition or on the Cu film just prior to deposition of the second Co film. The In has a strong tendency to float-out to the surface during deposition of the spin valve leaving the spin-valve layers largely intact. The exchange bias at the FeMn/Ni80Fe20 interface can be increased from 12 to 25 mT by the use of thicker In (1.4 nm). © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362659
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  • 10
    Electronic Resource
    Electronic Resource
    Low-temperature growth of giant magnetoresistance spin valves (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 282-290 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have investigated the dependence of the giant magnetoresistance (GMR) effect, the coercivity, the coupling field, and the resistivity on film deposition at low-substrate temperatures (150 K) in spin valve multilayers of the general type: FeMn/Ni80Fe20/Co/Cu/Co/Ni80Fe20/glass. Low substrate temperatures tend to suppress both thermally activated surface diffusion of deposited atoms and interdiffusion at interfaces, which often occur during thin-film deposition at room temperature. We find significant increases in the GMR, significant reductions in the magnetic coupling across the Cu layer, slight reductions in the coercivity of the unpinned film, and slight reductions in the resistivity depending on which parts of the multilayer are deposited at low temperature. When the entire film is deposited at 150 K we obtain a GMR of 8.8% at a coercivity of less than 0.5 mT (5 Oe). © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360942
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