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  • Articles: DFG German National Licenses  (2)
  • 1995-1999  (2)
  • Chemistry  (2)
  • Polymer and Materials Science  (2)
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  • Articles: DFG German National Licenses  (2)
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Year
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  • 1
    Electronic Resource
    Electronic Resource
    Waveguide Effect on the Image Formation Process in Near-field Photocurrent Spectroscopy of Semiconductor Laser Diodes (1997)
    Chichester [u.a.] : Wiley-Blackwell
    Surface and Interface Analysis 25 (1997), S. 573-582 
    Details
    ISSN: 0142-2421
    Keywords: near-field microscopy ; laser diodes ; photocurrent spectroscopy ; optics ; semi-conductor lasers ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Physics
    Notes: Near-field photocurrent spectra of high-power laser diode arrays with different wave-guide characteristics are reported. Subwavelength spatial resolution is achieved by using a near-field fibre probe as the excitation source. The effect of the laser diode waveguide structure and of surface recombination processes on the near-field photocurrent image formation is discussed and analysed in terms of a beam propagation model. Experiments on laser diodes before and after accelerated ageing demonstrate the potential of the technique for analysing microscopic defect formation processes in optoelectronic devices.© 1997 John Wiley & Sons, Ltd.
    Additional Material: 10 Ill.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
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    Paper (German National Licenses)
  • 2
    Electronic Resource
    Electronic Resource
    Near-field Optical Spectroscopy of Single GaAs Quantum Wires (1997)
    Chichester [u.a.] : Wiley-Blackwell
    Surface and Interface Analysis 25 (1997), S. 583-592 
    Details
    ISSN: 0142-2421
    Keywords: near-field microscopy ; semiconductors ; quantum wires ; photoluminescence spectroscopy ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Physics
    Notes: The nanoscopic room temperature optical properties of single quantum wires are characterized by a combination of near-field photoluminescence and photoluminescence excitation spectroscopy. Single GaAs quantum wires with a 50 nm lateral dimension are grown at the edge of 15 nm high mesa stripes on patterned GaAs(311) surfaces. Wire formation relies on the preferential migration of Ga atoms from a GaAs layer on the mesa top and bottom towards the sidewall. Spatially resolved photoluminescence spectra separate quantum wire and quantum well emission and image the diffusion of photoexcited carriers into the wires. Photoluminescence excitation spectra give insight into the absorption spectrum of the wires and the spectral position of different interband transitions in the one-dimensional carrier system. They allow the change in local thickness of the GaAs quantum well due to the migration process to be monitored directly with subwavelength spatial resolution. Both the trapping of carriers into the wire and the detrapping of carriers generated within the wire into the surrounding quantum well states are separately resolved.© 1997 John Wiley & Sons, Ltd.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
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