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  • Articles: DFG German National Licenses  (2)
  • 1995-1999  (2)
  • Polymer and Materials Science  (1)
  • surface activation  (1)
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  • Articles: DFG German National Licenses  (2)
Material
Years
  • 1995-1999  (2)
Year
Keywords
  • 1
    Electronic Resource
    Electronic Resource
    Springer
    Journal of applied electrochemistry 27 (1997), S. 1362-1368 
    ISSN: 1572-8838
    Keywords: manganese oxide electrode ; oxygen evolution ; seawater electrolysis ; surface activation
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Electrical Engineering, Measurement and Control Technology
    Notes: Abstract Utilizing the fact that the equilibrium potential of oxygen evolution is lower than that of chlorine evolution, oxygen evolution in seawater electrolysis was enhanced by decreasing the polarization potential under galvanostatic conditions through increasing the effective surface area of manganese oxide electrodes. Electrodes were prepared by a thermal decomposition method. IrO2-coated titanium (IrO2/Ti electrode) was used as the substrate on which manganese oxide was coated (MnOX/IrO2/Ti electrode). Subsequently, oxide mixtures of manganese and zinc were coated (MnOX–ZnO/MnOX/IrO2/Ti electrode). The effective surface area of the MnOX–ZnO/MnOX/IrO2/Ti electrodes was increased by selective dissolution of zinc (leaching) into hot 6M KOH. The oxygen evolution efficiency of the MnOX/IrO2/Ti electrode was 68–70%. Leaching of zinc from the MnOX–ZnO/MnOX/IrO2/Ti electrodes with 25mol% or less zinc led to a significant increase in the oxygen evolution efficiency. The maximum efficiency attained was 86% after leaching of zinc from the MnOX–25mol%ZnO/MnOX/IrO2/Ti electrode. However, large amounts of zinc addition, such as 40mol% or more are detrimental because of a decrease in the oxygen evolution efficiency. This is due to the formation of a double oxide, ZnMnO3, which is hardly dissolved in hot 6M KOH.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Chichester [u.a.] : Wiley-Blackwell
    Surface and Interface Analysis 23 (1995), S. 892-898 
    ISSN: 0142-2421
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Physics
    Notes: The mechanism of oxidation of copper at the alloy/film interface, and the subsequent migration of copper ions in barrier-type films, has been examined for anodizing of an Al - 1.5 wt.% Cu alloy with a prior chemical polishing treatment. Both chemical polishing and anodizing result in formation of a thin layer of alloy at the alloy/film interface, of ∼2 nm thick, that is highly enriched in copper. The layer is present immediately beneath the different types of film formed by chemical polishing and subsequent anodizing, and contains in both cases ∼6 × 1019 Cu atoms m-2. The amount of copper contained within the enriched layer of alloy is not significantly dependent upon the anodizing voltage. During anodic film growth, both aluminium and copper ions are incorporated into the film at the alloy/film interface, on average in their alloy proportions. However, the film is depleted in copper relative to the alloy because copper ions in the film migrate faster than Al3+ ions and, on reaching the film/electrolyte interface, are ejected directly to solution. The mechanism of oxidation of copper is proposed to depend upon the formation, through prior oxidation of aluminium, of copper-rich clusters in the enriched layer of alloy at the alloy/film interface. Individual clusters are oxidized only on achieving a critical size. Consequently, copper is incorporated into the film discontinuously both in time and in position along the alloy/film interface. The films contain a high population density of flaws, which affects the film composition, the uniformity of ionic current, the faradaic efficiency of film growth, and the detailed distributions of copper ions within the films. However, the general features of film growth are compatible with the usual growth mechanism of anodic alumina, with transport numbers of Al3+ and O2-/OH- ions of ∼0.4 and ∼0.6, respectively.
    Additional Material: 5 Ill.
    Type of Medium: Electronic Resource
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