ISSN:
0142-2421
Keywords:
Chemistry
;
Polymer and Materials Science
Source:
Wiley InterScience Backfile Collection 1832-2000
Topics:
Physics
Notes:
The Al-0.5 wt.% Cu-1 wt.% Si/TiW interface reaction due to thermal treatments in nitrogen was investigated using SIMS, x-ray diffraction (XRD), TEM, XPS and SEM. Titanium starts to diffuse into the Al alloy layer at low temperatures such as 350°C. However, Ti has hardly any effect on the sheet resistance. Tungsten diffuses and reacts with Al above 450°C. The rugged interfacial reaction product formed after annealing at 450°C, which may be W(Al, Si)2, does not affect the sheet resistance. The needle-shaped reaction product formed after annealing above 500°C, which is Al12 W, is responsible for the large increase in sheet resistance. An aluminium oxide layer, several nanometres thick, formed on the Al alloy surface after annealing at 500°C acts as a W diffusion barrier.
Additional Material:
8 Ill.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1002/sia.740190165
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