ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
O, N, or C impurity was separately incorporated into a-Si:H films by hot-wall glow discharge decomposition. The effect of the impurity incorporation was investigated by electrical and electron spin resonance measurements. Both O and N impurities were found to increase the dark conductivity by decreasing its activation energy in a-Si:H films. Furthermore, it was found that O and N impurities delay the photoresponse. C impurity, however, has no appreciable effect on them. These findings suggest that O and N impurities shift the Fermi level upward and form a trapping state for photoexcited electrons, supporting our O+3 and N+4 model.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.106102
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