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1

Digitale Medien

Femtosecond hot-carrier energy relaxation in GaAs (1987)

Schoenlein, R. W. ; Lin, W. Z. ; Ippen, E. P. ; [weitere]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 51 (1987), S. 1442-1444

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ISSN: 1077-3118

Quelle: AIP Digital Archive

Thema: Physik

Notizen: Excited carrier dynamics in GaAs and Al0.2Ga0.8As are investigated using femtosecond pump and continuum probe techniques. We observe absorption spectral hole burning arising from excited carriers generated by transitions from the split-off band as well as the heavy- and light-hole bands. Transient absorption saturation measurements indicate that the initial nonthermal carrier distribution thermalizes on a time scale of several tens of femtoseconds.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1063/1.98651

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2

Digitale Medien

Temperature dependence of interstitial oxygen diffusion in antimony-doped Czochralski silicon (1988)

Oates, A. S. ; Lin, W.

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 53 (1988), S. 2659-2660

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ISSN: 1077-3118

Quelle: AIP Digital Archive

Thema: Physik

Notizen: We have measured directly the diffusivity of interstitial oxygen in Sb-doped Czochralski silicon in the temperature range 750–1150 °C. Using secondary-ion mass spectroscopy of outdiffusion profiles, we show that the diffusivity is the same as that for lightly B-doped crystals heated under identical conditions over the temperature range studied. We briefly discuss the implication of these results upon oxygen precipitation mechanisms in Sb-doped silicon.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1063/1.100186

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3

Digitale Medien

Femtosecond dynamics of highly excited carriers in AlxGa1−xAs (1987)

Lin, W. Z. ; Fujimoto, J. G. ; Ippen, E. P. ; [weitere]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 51 (1987), S. 161-163

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ISSN: 1077-3118

Quelle: AIP Digital Archive

Thema: Physik

Notizen: Femtosecond transient absorption saturation measurements are used to investigate the scattering of optically excited carriers in AlGaAs. With pulses as short as 35 fs at 1.98 eV, scattering times ranging from 13 to 330 fs are observed in samples of AlxGa1−xAs with x=0, 0.1, 0.2, 0.3, and 0.4. A dramatic decrease in the rate of carrier scattering out of the initial optically excited states is observed with increasing Al concentration.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1063/1.98908

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4

Digitale Medien

Localized epitaxial growth of tetragonal and hexagonal WSi2 on (111)Si (1985)

Lin, W. T. ; Chen, L. J.

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 58 (1985), S. 1515-1518

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ISSN: 1089-7550

Quelle: AIP Digital Archive

Thema: Physik

Notizen: Both epitaxial tetragonal and hexagonal WSi2 (t-WSi2 and h-WSi2) were grown locally on (111)Si. The best epitaxy was obtained in 600–1100 °C two-step annealed samples. The orientation relationships between t-WSi2 and Si are [110]WSi2(parallel)[111]Si and (004)WSi2(parallel)(2¯02), whereas those between h-WSi2 and Si are [0001]WSi2(parallel)[111]Si and (202¯0)WSi2(parallel)(202¯)Si. Interfacial dislocations, 80 A(ring) in spacing, were identified to be of edge type with (1/6)〈112〉 Burgers vectors. Two step annealings were found to be effective in improving the epitaxy and relieving the island formation of WSi2 on Si. Significant intermixing of W and Si atoms during the preannealing is proposed to account for the effects.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1063/1.336308

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5

Digitale Medien

Localized epitaxial growth of MoSi2 on silicon (1986)

Lin, W. T. ; Chen, L. J.

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 59 (1986), S. 1518-1524

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ISSN: 1089-7550

Quelle: AIP Digital Archive

Thema: Physik

Notizen: Epitaxial tetragonal and hexagonal MoSi2 (t-MoSi2 and h-MoSi2) were grown locally in (001), (111), and (011)Si. Five different epitaxial modes, referring to sets of definite orientation relationships between silicides and the substrate Si, were identified for t-MoSi2, whereas three distinct modes were found for h-MoSi2. Variants of epitaxy, required by the symmetry consideration, were also observed. It is conceived that ample thermal energy was supplied during high-temperature annealings to cause various modes of epitaxy which presumably correspond to low-energy states that occur. The reactive nature of the silicide formation is suggested to facilitate the growth of epitaxial silicides on silicon.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1063/1.336458

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6

Digitale Medien

Localized epitaxial growth of WSi2 on silicon (1986)

Lin, W. T. ; Chen, L. J.

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 59 (1986), S. 3481-3488

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ISSN: 1089-7550

Quelle: AIP Digital Archive

Thema: Physik

Notizen: Epitaxial growth of both tetragonal and hexagonal WSi2 in silicon was investigated by transmission electron microscopy. Eight different modes of WSi2 epitaxy were found to grow in (001), (111), and (011) Si. Variants of WSi2 epitaxy were also observed. Crystallographic analyses were performed to find possible matches between atoms in overlayer and silicon at WSi2/Si interfaces. Interfacial structures were analyzed. The roles of the lattice match in the growth of epitaxial WSi2 and MoSi2, which are similar in various aspects, are explored. The effects of anharmonicity in the interatomic force of overlayer on the heteroepitaxial growth and pseudomorphism are discussed.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1063/1.336818

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7

Digitale Medien

Electron spin resonance study of nitrile and other radicals trapped in .gamma.-irradiated single crystals of cyanoacetic acid (1972)

Toriyama, K. ; Lin, W. C.

s.l. : American Chemical Society

The @journal of physical chemistry 〈Washington, DC〉 76 (1972), S. 3377-3384

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Quelle: ACS Legacy Archives

Thema: Chemie und Pharmazie , Physik

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1021/j100667a014

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8

Digitale Medien

The Science and Engineering of Large- Diameter Czochralski Silicon Crystal Growth (1987)

Lin, W ; Benson, K E

Palo Alto, Calif. : Annual Reviews

Annual Review of Materials Research 17 (1987), S. 273-298

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ISSN: 0084-6600

Quelle: Annual Reviews Electronic Back Volume Collection 1932-2001ff

Thema: Maschinenbau

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1146/annurev.ms.17.080187.001421

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9

Digitale Medien

Membrane-Bound NAD(P)H Dehydrogenases in Higher Plant Cells (1986)

Moller, I M ; Lin, W

Palo Alto, Calif. : Annual Reviews

Annual Review of Plant Physiology 37 (1986), S. 309-334

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ISSN: 0066-4294

Quelle: Annual Reviews Electronic Back Volume Collection 1932-2001ff

Thema: Biologie

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1146/annurev.pp.37.060186.001521

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10

Digitale Medien

Short-range order in a gold–40.0 atomic per cent palladium alloy (1970)

Lin, W. ; Spruiell, J. E. ; Williams, R. O.

Copenhagen : International Union of Crystallography (IUCr)

Applied crystallography online 3 (1970), S. 297-305

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ISSN: 1600-5767

Quelle: Crystallography Journals Online : IUCR Backfile Archive 1948-2001

Thema: Geologie und Paläontologie , Physik

Notizen: The local atomic arrangements in an Au-40 at.% Pd alloy were investigated by measuring the X-ray diffuse scattering from a single crystal. A computer simulation of the short-range structure was used in the interpretation of the diffuse scattering results. The interpretation indicated a tendency toward the formation of a tetragonal AB long period superlattice which has not previously been observed to occur. The static displacements of the atoms from their average positions were shown to be very small in this alloy.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1107/S0021889870006337

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