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  • Articles: DFG German National Licenses  (5)
  • 1985-1989  (3)
  • 1955-1959  (2)
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  • Articles: DFG German National Licenses  (5)
Material
Years
Year
  • 1
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 62 (1958), S. 1131-1132 
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 61 (1957), S. 1336-1340 
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 5913-5913 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: One goal of this work was to develop a reproducible method of preparing high quality Y-Ba-Cu-O superconducting films and to study their properties versus thickness. This was accomplished by rf diode sputtering from a single target. Twenty-seven depositions were made using a target containing 8.9-at. % Y, 37.3-at. % Ba, and 53.8-at. % Cu. Film thicknesses ranged from 0.09 to 2.4 μm. The film compositions obtained were 15.6±1.0-at. % Y, 35.8±1.0-at. % Ba, and 48.7±1.7-at. % Cu for the mean and standard deviation. The films were amorphous as deposited and crystallized by annealing in O2 at 915 °C. X-ray diffraction, transmission electron microscopy, and scanning electron microscopy indicated that, on (100)SrTiO3 substrates, films with thickness less than ∼0.25 μm were epitaxially oriented with their c axis perpendicular to the substrate. Films on (110)SrTiO3 were oriented with their c axis parallel to the substrate. On (100)SrTiO3, zero resistance was achieved in 30 samples from 27 runs at 85.6±1.4 K with a transition width (10%–90%) of 1.8±1.1 K independent of thickness. Results for deposition on a variety of other substrates were more variable. Diamagnetic shielding of up to 38% was calculated from the initial slope of M vs H. This low value was attributed to the presence of second phases and a significant diffusion layer thickness, both observed by transmission electron microscopy. Critical currents, measured by transport using a four-point probe, reached 8.1×105 A/cm2 at 77.35 K for a 0.2-μm film deposited on (100)SrTiO3 . Comparable values were obtained by calculation from the M-H hysteresis loop, from which we infer that there are either continuous epitaxial sheets of c axis oriented 123 or, if there are grain boundaries, the coupling across them is strong.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 6388-6391 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: One goal of this work was to develop a reproducible method of preparing high quality Y-Ba-Cu-O superconducting films and to study their properties versus thickness. This was accomplished by rf diode sputtering from a single target. Twenty-seven depositions were made using a target containing 8.9-at. % Y, 37.3-at. % Ba, and 53.8-at. % Cu. Film thicknesses ranged from 0.09 to 2.4 μm. The film compositions obtained were 15.6±1.0-at. % Y, 35.8±1.0-at. % Ba, and 48.7±1.7-at. % Cu for the mean and standard deviation. The films were amorphous as-deposited and crystallized by annealing in O2 at 915 °C. X-ray diffraction, transmission electron microscopy, and scanning electron microscopy indicated that, on (100)SrTiO3 substrates, films with thickness less than ∼0.25 μm were epitaxially oriented with their c axis perpendicular to the substrate. Films on (110)SrTiO3 were oriented with their c axis parallel to the substrate. On (100)SrTiO3, zero resistance was achieved in 30 samples from 27 runs at 85.6±1.4 K with a transition width (10%–90%) of 1.8±1.1 K independent of thickness. Results for deposition on a variety of other substrates were more variable. Diamagnetic shielding of up to 38% was calculated from the initial slope of M vs H. This low value was attributed to the presence of second phases and a significant diffusion layer thickness, both observed by transmission electron microscopy. Critical currents, measured by transport using a four-point probe, reached 8.1×105 A/cm2 at 77.35 K for a 0.2-μm film deposited on (100)SrTiO3 . Comparable values were obtained by calculation from the M-H hysteresis loop, from which we infer that there are either continuous epitaxial sheets of c axis oriented 123 or, if there are grain boundaries, the coupling across them is strong.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 3592-3594 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Amorphous films of transition metal-rare earth alloys were prepared by rf bias sputtering ∼1000 A(ring) thick, and were protected with ∼1000-A(ring) SiO2, under conditions to provide an easy axis perpendicular to the film plane. Some of the kinetics of the changes in the parameters affecting the domain size were measured, namely the anisotropy, the coercivity Hc and the argon content. Both isothermal and isochronal exposures were used. The decrease in the perpendicular anisotropy K⊥ and Hc and the increase in the planar anisotropy all follow first-order kinetics, that is, the Johnson–Mehl–Avrami exponent n=1.0. The activation energy for the change in K⊥ was 1.0±0.2 eV. The changes in anisotropy were the rate limiting factor in the lifetime of the films. The Hc decreased with ΔE=0.6±0.2 eV while the Ar content decreased with ΔE=0.08±0.05 eV. Because of the large difference in activation energy for the change in Ar compared to the changes in K or Hc we conclude that the rate limiting step for the change in Ar is different than the rate limiting step for the changes in K and Hc. At least two mechanisms have been associated with the changes on annealing. One is the oxidation of the rare earth component even through the SiO2 overlayer; the other is the release of Ar which changes the local stress in the film or changes the degree of isolation of the columnar structure by the Ar.
    Type of Medium: Electronic Resource
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