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  • Articles: DFG German National Licenses  (4)
  • 1985-1989  (4)
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  • Articles: DFG German National Licenses  (4)
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Year
  • 1
    Electronic Resource
    Electronic Resource
    Simultaneous planar growth of amorphous and crystalline Ni silicides (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 2033-2035 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report a solid-state interdiffusion reaction induced by rapid thermal annealing and vacuum furnace annealing in evaporated Ni/Si bilayers. Upon heat treatment of a Ni film overlaid on a film of amorphous Si evaporated from a graphite crucible, amorphous and crystalline silicide layers grow uniformly side by side as revealed by cross-sectional transmission electron microscopy and backscattering spectrometry. This phenomenon contrasts with the silicide formation behavior previously observed in the Ni-Si system, and constitutes an interesting counterpart of the solid-state interdiffusion-induced amorphization in Ni/Zr thin-film diffusion couples. Carbon impurity contained in the amorphous Si film stabilizes the amorphous phase. Kinetic and thermodynamic factors that account for the experimental findings are discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100494
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Solid-state interdiffusion reactions in Ni/Ti and Ni/Zr multilayered thin films (1987)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 661-663 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have performed a comparative transmission electron microscopy study of solid-state interdiffusion reactions in multilayered Ni/Zr and Ni/Ti thin films. The Ni-Zr reaction product was amorphous while the Ni-Ti reaction product was a simple intermetallic compound. Because thermodynamic and chemical properties of these two alloy systems are similar, we suggest kinetic origins for this difference in reaction product.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.98326
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Maximum thickness of amorphous NiZr interlayers formed by a solid-state reaction technique (1987)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 1693-1695 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Formation of the equilibrium intermetallic compound NiZr in sputter deposited Ni/Zr diffusion couples is suppressed by the formation of a metastable amorphous NiZr alloy until a critical thickness of the amorphous NiZr interlayer is reached. The temperature dependence of this critical thickness is studied experimentally. A phenomenological model based on the premise of interfacial heterogeneous nucleation is proposed to understand the evolution of Ni/Zr diffusion couples.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.98546
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    Paper (German National Licenses)
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  • 4
    Electronic Resource
    Electronic Resource
    Hydrogen-induced crystal to glass transformation in Zr3Al (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 1820-1822 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The process of hydrogen-induced amorphization of the equilibrium intermetallic compound Zr3Al is compared to ion-irradiation-induced amorphization of the same compound. In contrast to ion irradiation, where almost complete chemical disordering precedes the onset of amorphization, hydrogenation of Zr3Al causes no appreciable change in long-range order prior to amorphization. Electron microscopy reveals apparent homogeneous nucleation of the amorphous phase, and striking similarities to martensitic microstructures. The maximum lattice dilation observed prior to amorphization by hydrogen absorption is identical to that found during irradiation, indicating that lattice expansion is a common measure of the crystal instability induced by different solid-state processing techniques.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100481
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    Paper (German National Licenses)
    Fulltext
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