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  • Articles: DFG German National Licenses  (2)
  • (Sr, Ca)RuO3  (1)
  • 74.72.−h  (1)
Source
  • Articles: DFG German National Licenses  (2)
Material
Years
  • 1
    Electronic Resource
    Electronic Resource
    Springer
    Journal of low temperature physics 105 (1996), S. 1571-1576 
    ISSN: 1573-7357
    Keywords: 74.76.Bz ; 74.72.−h
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract Superconducting thin films of HgBa2CuO4 have been grown in situ by using a sputtering method for the first time. (100) SrTiO3 was used as substrates and heated between 500 ° C to 600 ° C during the film deposition. By setting the deposition conditions properly, c axis oriented HgBa2CuO4 films were grown perpendicularly to the substrate surface. It was found that Hg composition in the deposited films had close relation to the sputtering gas, namely, the oxygen partial pressure, Hg could remain in the film when the partial pressure of oxygen was lower than in the case of the other oxide superconductors such as Bi cuprates. The optimum oxygen partial pressure for the crystallized thin film ranged from 0.1 Pa to 0.01 Pa with total gas pressure of 0.6 Pa. The superconducting transition was observed at around 75K.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Springer
    Journal of superconductivity 7 (1994), S. 737-741 
    ISSN: 1572-9605
    Keywords: Multilayer ; thin film ; infinite layer ; (Sr, Ca)CuO2 ; (Sr, Ca)RuO3 ; TEM
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract Epitaxial multilayer thin films of “infinite-layer” (Sr, Ca)CuO2 and perovskite (Sr, Ca)RuO3 have been prepared on (100) SrTiO3 substrates by multitarget rf magnetron sputtering. X-ray diffraction analyses revealed that the multilayer structure of (Sr, Ca)CuO3/(Sr, Ca)RuO3 was successfully fabricated with a minimum layer thickness of 20 Å. Transmission electron microscopy measurements of the multilayers indicated that there was no dislocation which normally exists in single-layer films with an infinite-layer structure. Resistivities of multilayer films at room temperature ranged from 1 to 10 mΩ cm and showed semiconductor-like dependence against the temperature.
    Type of Medium: Electronic Resource
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