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  • Articles: DFG German National Licenses  (2)
  • Arsenic range  (1)
  • Biokompatibilität  (1)
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  • Articles: DFG German National Licenses  (2)
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Years
  • 1
    Electronic Resource
    Electronic Resource
    Springer
    Der Chirurg 70 (1999), S. 847-857 
    ISSN: 1433-0385
    Keywords: Key words: Biomaterials ; Biocompatibility ; Process engineering ; Reciprocal technology transfer. ; Schlüsselwörter: Biomaterialien ; Biokompatibilität ; Prozesstechnologien ; wechselseitiger Technologietransfer.
    Source: Springer Online Journal Archives 1860-2000
    Topics: Medicine
    Description / Table of Contents: Zusammenfassung. Biokompatible Werkstoffe und zugehörige Prozesstechnologien, mit denen eine optimale Strukur- und Oberflächenkompatibilität von Implantaten erreicht werden soll, werden vorgestellt. „Vital-avital composites“ für das „tissue engineering“, Zellkulturmodelle, poröse Keramiken und abbaubare Polymere werden beispielhaft dargestellt. Ein Hauptaspekt liegt auf der Konvertierung von Resultaten der Grundlagenforschung in klinische Anwendungen und auf dem Austausch von Technologien aus dem nichtmedizinischen in den medizinischen Bereich und umgekehrt.
    Notes: Summary. Biomaterials and related process engineering in order to obtain optimal surface and structural biocompatibility of implants and devices are presented. Vital-avital composites for tissue engineering, cell culture models, porous ceramics and degradable polymers are introduced as examples. Emphasis is laid on the conversion of basic research results into clinical applications and on the exchange of technologies from the non-medical into the medical field and vice versa.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Springer
    Applied physics 5 (1975), S. 347-350 
    ISSN: 1432-0630
    Keywords: Ion implantation ; Arsenic range ; Backscattering analysis
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract MeV4He ion backscattering and differential sheet resistivity measurements were made on As implants into silicon at room temperature. Analysis of backscattering measurements yields the projected rangeR p and projected standard deviation ΔR p . Over the energy range of 50 to 250 keV, the values ofR p are found to agree well with LSS theoretical predictions; however, values of ΔR p are systematically higher than theoretical calculations. Backscattering and differential sheet resistivity measurements on samples annealed at 950°C are in general agreement and indicate diffusional broadening of the profile.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
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