ISSN:
1573-4870
Keywords:
Ceramic-metal joining
;
interface structure
;
bonding strength
;
silicon carbide
;
chromium silicide
;
chromium carbide
Source:
Springer Online Journal Archives 1860-2000
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
Abstract Solid-state bonding at pressureless-sintered SiC has been carried out using 25-μm Cr foil at temperatures from 1373 to 1773 K for 1.8 ks in vacuum. The formation of reaction phases and microstructures at the interface between SiC and Cr was investigated by X-ray diffraction and microprobe analysis. At the bonding temperature of 1373 K the cubic Cr23C6phase formed next to Cr, and the hexagonal Cr7C3 phase formed next to SiC. At 1473 K the cubic phase Cr3SiCx appeared additionally on the SiC side. At 1573 K the complete diffusion path was established. Upon increasing the joining temperature beyond 1573 K all the chromium was consumed, and Cr23C6 and Cr3SiC x dissolved. A layered structure consisting of SiC/Cr5Si3 C x /Cr7C3/Cr5Si3 C x /SiC occurred.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1023/A:1022617502576
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