ISSN:
1572-8986
Keywords:
Plasma etching
;
SF6 discharge
;
tungsten
;
molybdenum
;
mass spectrometry
;
WF6
;
WOF4
Source:
Springer Online Journal Archives 1860-2000
Topics:
Chemistry and Pharmacology
,
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
,
Technology
Notes:
Abstract The etching rates and reaction products of refractory metals (W, Mo, and Ta) and silicon have been studied in a SF6-O2 r.f. plasma at 0.2 torr. The relative concentrations of WF6 and WOF4 and the intensities of the WF n + (n=3−5), WOF m + (m=1−3), MoF n + , and MoF m + ions have been measured by mass spectroscopy. An analysis of the neutral composition of the plasma during etching of these metals and a comparison with the results obtained for silicon show that at least two species are involved for W and Mo etching: fluorine and oxygen atoms. A reaction scheme is proposed.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/BF00566008
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