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  • Articles: DFG German National Licenses  (3)
  • Semiconductors  (3)
  • 1
    Electronic Resource
    Electronic Resource
    Chichester : Wiley-Blackwell
    International Journal for Numerical Methods in Fluids 7 (1987), S. 131-153 
    ISSN: 0271-2091
    Keywords: Finite Elements ; Transient Flows ; Three-dimensional Flows ; Natural Convection ; Interfaces Oscillatory Flows ; Crystal Growth ; Semiconductors ; Gallium Arsenide ; Engineering ; Engineering General
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: We study the transient motion of the solidification front during the growth of semiconductor crystals in the horizontal Bridgman geometry. The calculation is based on a two-dimensional flow. We use finite elements which deform with the motion of the interface. The energy equation is coupled with the isothermal constraint of the interface in an implicit transient algorithm. Several examples show the oscillatory motion of the interface caused by the periodic flow of the melt, and they reveal the importance of the growth rate on the shape of the interface.
    Additional Material: 19 Ill.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
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  • 2
    Electronic Resource
    Electronic Resource
    Chichester : Wiley-Blackwell
    International Journal for Numerical Methods in Fluids 7 (1987), S. 29-47 
    ISSN: 0271-2091
    Keywords: Finite Elements ; Transient Flows ; Three-dimensional Flows ; Natural Convection ; Interfaces Oscillatory Flows ; Crystal Growth ; Semiconductors ; Gallium Arsenide ; Engineering ; Engineering General
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: We study the generation of periodic velocity and temperature fields in a plane horizontal crucible of molten metal under the action of a horizontal temperature gradient. The geometry and the boundary conditions are similar to those encountered in the Bridgman growth process of semiconductor crystals, although the present paper is limited to two-dimensional flows. We use transient finite difference and finite element algorithms which lead to identical results. We demonstrate the oscillatory mechanism in two different geometries.
    Additional Material: 15 Ill.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
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  • 3
    Electronic Resource
    Electronic Resource
    Chichester : Wiley-Blackwell
    International Journal for Numerical Methods in Fluids 7 (1987), S. 49-67 
    ISSN: 0271-2091
    Keywords: Finite Elements ; Transient Flows ; Three-dimensional Flows ; Natural Convection ; Interfaces Oscillatory Flows ; Crystal Growth ; Semiconductors ; Gallium Arsenide ; Engineering ; Engineering General
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: We study the steady-state three-dimensional flow which occurs in a horizontal crucible of molten metal under the action of a horizontal temperature gradient. The geometry and the boundary conditions are similar to those encountered in the Bridgman growth process of semiconductor crystals. We find that three-dimensional effects can have a dramatic influence upon the flow, which, before the onset of periodic disturbances, differs appreciably from its two-dimensional counterpart. We also investigate the sensitivity of the flow to non-symmetric disturbances.
    Additional Material: 24 Ill.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
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