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Positron lifetime measurements inn- andp-type silicon (1974)

Dorikens, M. ; Dauwe, C. ; Dorikens-Vanpraet, L.

Springer

Applied physics 4 (1974), S. 271-272

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ISSN: 1432-0630

Keywords: Positron annihilation (sub.: lifetimes) ; Semiconductors (sub.: silicon)

Source: Springer Online Journal Archives 1860-2000

Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics

Notes: Abstract Positron lifetime measurements were carried out in four different samples of silicon, namelyn-type (P-doped) 75 Ωcm,n-type (Sb-doped) 0.018 Ωcm,p-type (B-doped) 60 Ωcm andp-type (B-doped) 0.02 Ωcm. The measurements were made at room temperature and at 77K. A positron lifetime of τ1=(230±2) psec was found for all samples, independant of dopant or temperature.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1007/BF00884239

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