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  • Articles: DFG German National Licenses  (15)
  • 11
    Electronic Resource
    Electronic Resource
    Corrosion Behaviors Studied in Self-Assembled Processes of Alkanethiol Monolayers on Polycrystalline Gold Substrates (2007)
    s.l. ; Stafa-Zurich, Switzerland
    Solid state phenomena Vol. 121-123 (Mar. 2007), p. 385-388 
    Details
    ISSN: 1662-9779
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Physics
    Notes: In this paper, the corrosion phenomenon occurred on the polycrystalline gold substrateshas been for the first time observed by in situ quartz crystal microbalance (QCM) method foradsorption of alkanethiol monolayers, which may be attributed to thiol-induced dissolution of goldduring the adsorption process in the presence of oxygen. It is evident from the image of manycorrosive defects or holes produced on the surface of gold grains by using atomic force microscopy(AFM). The kinetic equation on corrosion rate of gold dissolved in the organothiol solution has beenobtained. The gold corrosion rate at fast stage can be estimated to be 9.2 × 1011 Au atoms cm-2 s-1
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/23/transtech_doi~10.4028%252Fwww.scientific.net%252FSSP.121-123.385.pdf
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  • 12
    Electronic Resource
    Electronic Resource
    Synthesis and Properties of Nd-Substituted Bismuth Titanate Polycrystalline Thin Films with a-/b-Axes Orientation (2006)
    s.l. ; Stafa-Zurich, Switzerland
    Key engineering materials Vol. 301 (Jan. 2006), p. 57-60 
    Details
    ISSN: 1013-9826
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Nd-substituted Bi4Ti3O12 (BNT) polycrystalline thin films with preferred a-/b-axes orientations were grown on sputter-grown IrO2(101) layers by chemical solution deposition method. After optimizing the heat treatment conditions, insulating characters and ferroelectric properties in 250-nm-thick BNT thin films with a-/b-axes orientations were investigated at room temperature. Low leakage current density of J=10-7~10-8 A/cm2 at 100 kV/cm and fair value of remnant polarization (2Pr=31 μC/cm2 at 400 kV/cm) were measured even though the Bi2O2 blocking layeraligned parallel to the film normal
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/01/50/transtech_doi~10.4028%252Fwww.scientific.net%252FKEM.301.57.pdf
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  • 13
    Electronic Resource
    Electronic Resource
    Development of Lead-Free Piezoelectric Thick Films with a/b-Axis-Oriented Bi〈sub〉4-x〈/sub〉Pr〈sub〉x〈/sub〉Ti〈sub〉3〈/sub〉O〈sub〉12〈/sub〉 (2006)
    s.l. ; Stafa-Zurich, Switzerland
    Key engineering materials Vol. 301 (Jan. 2006), p. 61-64 
    Details
    ISSN: 1013-9826
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Pr-substituted Bi4Ti3O12 (BPT, Bi4-xPrxTi3O12, x=0.1-0.4) polycrystalline thick films with a-/b-axes orientations and thickness of 2-3 μm were grown on sputter-grown IrO2 layers by chemical solution deposition method for developing lead-free piezoelectric film microdevices. Electric-field-induced strains measurements were performed by double-beam laser displacement meter and longitudinal strain of e=0.25 % under 400 kV/cm and piezoelectric coefficient d33=63 pm/V at 10 Hz were observed in BPT thick film of x=0.1 with a-/b-axes mixed orientations. The value of strain closely related to spontaneous polarization and monotonously decreased with increasing x. Microstructures of 3 μm-thick BPT films were fabricated by photolithography and dry etching processes with several tens micrometers in size
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/01/50/transtech_doi~10.4028%252Fwww.scientific.net%252FKEM.301.61.pdf
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  • 14
    Electronic Resource
    Electronic Resource
    Low-Temperature Preparation of (Ba,Sr)TiO3 Perovskite Phase by Sol-Gel Method (1999)
    Springer
    Journal of sol gel science and technology 16 (1999), S. 129-134 
    Details
    ISSN: 1573-4846
    Keywords: sol-gel processing using metal alkoxides ; BST monolithic gel ; crystallization at low temperature
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology
    Notes: Abstract We have investigated on the synthesis of Ba1 − xSrxTiO3 (BST, x = 0.0–1.0) solid solution at low temperature by a sol-gel method using precursor solutions of Ba(OC2H5)2, Sr(OC2H5)2, and Ti(OCH(CH3)2)4 dissolved in 2-methoxyethanol. Crystalline BST solid solution monolithic gels were obtained as dried at 90°C. Crystalline fraction of BST gels increased with increasing concentration of the precursor solution and increasing amount of the hydrolysis water used. Ba0.4Sr0.6TiO3 (x = 0.6) gels from a precursor solution of 0.5 mol/l with hydrolysis water of H2O/Ti = 50 crystallized during aging at 30°C.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1023/A:1008773423682
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  • 15
    Electronic Resource
    Electronic Resource
    Giant Piezoresistive Effects in Single Grain Boundaries of Semiconducting Barium Titanate Ceramics* (1999)
    Springer
    Journal of electroceramics 4 (1999), S. 99-103 
    Details
    ISSN: 1573-8663
    Keywords: piezoresistive effect ; Barium titanate ; single grain boundary ; spontaneous polarization ; domain morphology
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract Extremely large piezoresistive effects with a gage factor (elastoresistance) of 〉 1 × 106 in single grain boundaries of thin ceramic bars of semiconducting barium titanate have been observed at room temperature. Thin barium titanate ceramic bars with a diameter in the range of 10 to 20 μm were prepared to consist of single grains joined together in series. Large piezoresistive effects were observed for some of the single grain boundaries in the present samples under compressive stresses, but no distinct piezoresistance was observed in the grain bulk. A giant piezoresistive effect with a gage factor of 3 × 107 was observed for a single grain boundary which exhibited a saw-tooth type PTCR (positive temperature coefficient of resistivity) characteristic with a significantly large bias dependence of it. This demonstrates that the piezoresistive phenomenon may be interpreted in terms of the change of the potential barrier height due to the change of ferroelectric domain morphologies in the vicinity of grain boundaries under mechanical and electric stresses.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1023/A:1009958725603
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