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  • Articles: DFG German National Licenses  (79)
  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 1323-1326 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We investigate the behavior of paramagnetic AsGa+-related defects under 1.2 eV illumination at 4.2 K in plastically deformed bulk semi-insulating GaAs. We find them identical to the grown-in antisites with a similar photoquenchability and analogous parameters. Further, there is effective generation of additional AsGa centers after deformation. The photobehavior can be interpreted by a charge transfer model, where the metastability involved with the AsGa+ signal decay is not a defect inherent feature.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 4615-4617 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Aiming at a better understanding of intrinsic defects in III-V compounds, we reinvestigate fast-neutron-irradiated GaP. The surprising result is the observation of a similar spectrum, formerly ascribed to Asi-related defects in GaAs. Annealing experiments suggest this spectrum involves an impurity, probably boron.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 5196-5198 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A comparison of the electron paramagnetic resonance spectra obtained in fast neutron- and electron-irradiated GaAs crystals has confirmed the simultaneous presence of the quadruplet and singlet spectra, ascribed previously to As4+Ga and V2−Ga centers. Only in electron-irradiated material, however, are both signals separated by the selective microwave power saturation of the quadruplet. This apparent disparity is ascribed to a difference in the coupling between the two partners in the As4+Ga-V2−Ga associated complexes.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 4273-4280 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Diverse experimental approaches such as microwave saturation, photoexcitation, and phototransients, in combination with powerful multiparameter data analysis, have enabled us to unravel several intertwinning spectra of paramagnetic defects in 16 MeV-electron-irradiated semi-insulating InP:Fe, aimed at simulating ion implantation damage in this III-V substrate material. Some spectra have already been reported and identified in as-grown or electron-irradiated samples, such as the cubic FeIn and trigonal FeIn-Ini,In centers or in fast-neutron-irradiated samples, such as the tetragonal FeIn-Ini,P pair. Two of the new centers discovered have symmetries closely related to those of the former trigonal and tetragonal pairs, suggesting that they derive from the same defects, but in an environment modified by the particle-induced lattice damage. In this regard, it is noteworthy that these centers indeed show anisotropy effects that can be traced to the geometrical configuration of the electron irradiation. Surprisingly, no experimental evidence was found for the PIn isolated phosphorus antisite spectrum, although the latter defect might nevertheless be part of some of the new centers. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 69 (1998), S. 1270-1274 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: Uranium photoionization was observed in the afterglow of pulsed hollow cathode lamps illuminated by a dye laser tuned near the electronic transition around 591.5 nm (5L60−16 900 cm−1 7M7). The photoionization signal was used to monitor the time evolution of the ground state uranium vapor density in the cathode hole. Lifetimes over 1 ms were measured for the uranium vapor; that makes this device attractive for multistep photoionization spectroscopy. The obtained results lead to the conclusion that these long times are due to cluster formation in the afterglow. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 907-909 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A potential origin for the reported discrepancies on the low-temperature photosensitivity of particle-induced anion antisites in GaAs is revealed by a systematic study of the relative fraction of photoquenchable paramagnetic As4+Ga centers as a function of neutron fluence and annealing temperature. The electron paramagnetic resonance data show that the As4+Ga centers can be split into two subsets.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 4406-4412 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Undoped and iron-doped InP samples have been investigated by conventional electron paramagnetic resonance measurements before and after fast neutron irradiations. Besides the expected anion antisite PIn defect, they reveal the presence of a broad spectrum that could be ascribed to an anion vacancy Vp on the basis of detailed linewidth and g-shift scalings of the resonance parameters of already identified intrinsic defects in GaP and InP. The irradiated InP:Fe sample shows both the nearest and next-nearest FeIn-Ini pairs.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 2595-2602 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: After a brief recall of our main results obtained during a recent theoretical cluster calculation on anion antisite-related defects in GaAs, we discuss the consequences of their resonance parameters. Experimentally, we perform a detailed analysis of the electron paramagnetic resonance data in plastically deformed undoped and Cr-doped semi-insulating materials in conjunction with simultaneous EL2° optical absorption measurements. Combining theoretical calculations and experimental results, we are able to identify the "As+Ga'' spectrum as a superposition of spectra ascribed to the isolated As+Ga and to its binary and ternary vacancy complexes, whereas the ternary complex AsGaVGaVAs only is believed to be the probable configuration for EL2.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 59 (1986), S. 2812-2816 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A set of semi-insulating bulk GaAs samples of various specifications and origins has been studied under illumination conditions proper to reveal quenchable paramagnetic signals behaving like the metastable electrical defect EL2. Whereas In-alloyed crystals are almost free of any defect, all other materials display photosensitive signals which are either a quenchable quadruplet constrainable to the As4+Ga configuration or two enhanceable singlets not yet fully identified; the preferred occurrence of either type of spectrum is seemingly linked to the growth method.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 3902-3911 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Systematic Raman scattering experiments were carried out on [001] GaAs implanted with 70-keV Be+ ions both after implantation for samples subjected to fluences spanning the 1013–1015 cm−2 range and after successive isochronal thermal annealing steps performed between 200 and 900 °C for a selected series of Be doses. The implantation-induced damages were observed via the modifications with increasing fluence, of the first-order Raman line parameters (mainly for the LO peak) classified in terms of mode energy softening and linewidth increase. These modifications were quantitatively accounted for within the spatial coherence-length reduction formalism, which makes it possible to evaluate the mean size of unperturbed regions in as-implanted GaAs. Upon successive thermal treatments, the implanted layers were found to recover their crystalline perfection at a temperature as low as 500 °C. Above this temperature the Be electrical activation is evidenced by the sudden and drastic modification of only the "longitudinal'' response, which is interpreted as due to the coupling between the LO phonon and an overdamped plasmon. The detailed analysis of the coupled-mode behavior is presented in the case of p-doped GaAs. From the Raman line-shape analysis, including a near-surface free-carrier depleted zone, we have obtained information about the electrical properties of the layer in terms of carrier density and mobility. It is further shown that in the case of strong damping, the ratio ω2p/Γp, where ωp and Γp are, respectively, the plasmon frequency and damping, is a pertinent quantity since it is proportional to the electrical conductivity. All the reported Raman conclusions agree well with results found in the literature that were obtained from direct electrical techniques. Possible mechanisms involved in the electrical activation of Be in GaAs are briefly discussed.
    Type of Medium: Electronic Resource
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