Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
86 (1999), S. 774-778
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The crystallization behavior of amorphous Ge2Sb2Te5 thin films were investigated by using differential scanning calorimetry, x-ray diffraction, and optical reflectivity measurements. The analysis of in situ ellipsometry isotherm Ge2Sb2Te5 films based on the Johnson–Mehl–Avrami equation revealed that the crystallization process near 150 °C was a two-step process. In this alloy thin film, the kinetic exponents in the Johnson–Mehl–Avrami equation were about 4.4 for the first stage and 1.1 for the second stage. A kinetic model based on the cascaded crystallization is proposed. The proposed model showed good agreement with the experimental results obtained by transmission electron microscopy and x-ray diffraction. © 1999 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.370803
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