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  • Articles: DFG German National Licenses  (43)
  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 63 (1992), S. 3191-3195 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A high-speed emitter coupled logic system for fast averaging is described. This system may be used to extract signals from broadband background noise, while preserving harmonic content. Each captured waveform may consist of up to 1024 sample points, and up to 16 kilowaveforms may be accumulated in one cycle. A 20 kilowaveform per second averaging rate is achieved on signals in a 20-kHz to 10-MHz band. The system is used to process the intermediate frequency output of an electro-optic sampling probe in order to recover 14.4-GHz, nonsinusoidal, periodic waveforms from a GaAs integrated circuit.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 6511-6520 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Data from measurements of optical absorption, photoconductivity, dark conductivity, thermally stimulated conductivity (TSC), and thermoluminescence (TL) on samples of undoped and Ga-doped, Czochralski-grown Bi12GeO20 single crystals are reported. The photoconductivity is n type, and the dark conductivity is p type. Undoped BGO exhibits a broad, band-edge absorption due to the optical excitation of electrons to the conduction band which gives the samples a yellow coloration. This absorption is reduced by the addition of Ga which acts as a compensating acceptor. When illuminated with light into this absorption band, but with photons of energy less than the band gap, photoexcitation of electrons occurs. These become trapped, inducing additional absorption and photoconductivity bands and TSC signals, but not TL. Excitation with photons of energy greater than the band gap induces both TSC and TL. Examination of the TSC and TL signals as a function of excitation wavelength allows the distinction between electron and hole trapping states for which trapping parameters have been determined. In addition, dark conductivity reveals three major hole states at energies of ∼Ev+1.41, ∼Ev+0.86, and ∼Ev+0.54 eV. These are believed to be empty donor states. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 6521-6533 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The analysis of thermally stimulated conductivity (TSC) measurements performed on "pure'' Bi12GeO20 (BGO) and BGO doped with gallium is presented. The TSC data show many overlapping TSC peaks in the temperature range of interest (80–300 K) which arise from a complex array of trapping states. The TSC signals from both pure BGO and Ga-doped BGO are similar, consisting of a series of large peaks below 160 K and many smaller overlapping peaks between 180 and 300 K. The analysis shows that the large peaks below 160 K in undoped BGO arise from two trapping centers, each characterized by a distribution of activation energies centered at ∼0.24 and ∼0.29 eV, with distribution widths of ∼0.065 eV. In the Ga-doped BGO sample the large peak seen below 180 K arises from a single trapping center at ∼0.29 eV with a distribution width of ∼0.085 eV. Activation energies, frequency factors, and concentrations of trapping states have been determined. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 1019-1021 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Voltage waveforms with 6 V amplitude and 1.6 ps fall time were generated by voltage shock-wave formation on a hyperabrupt-doped Schottky diode monolithic GaAs nonlinear transmission line.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 7-9 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Nonzero backside potentials in microwave and digital GaAs circuits lead to small errors in direct electro-optic sampling measurements. We present experimental studies of the magnitude of this error signal as a function of center conductor width for 50 Ω coplanar waveguide transmission lines on a 20 mil substrate. Backside voltages 20 dB below the applied frontside signal are found for typical microwave circuit transmission lines. Calculation of this backside signal with finite difference techniques shows excellent agreement with experiment. Analytic estimates of the backside potential also may be derived in terms of the spatially periodic eigenfunctions for Laplace's equation in the substrate.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 1830-1833 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The temperature dependence of the photorefractive effect in undoped and Ga-doped Bi12GeO20 (BGO) crystals was measured over the temperature range from 40 to 300 K. From comparison of the decay curves of the laser-induced grating with thermally stimulated current and photoconductivity curves, we conclude that the major decay step between, ∼100 and ∼160 K, is due to the thermal release of trapped electrons from a distribution of traps centered near 0.3 eV, in both types of BGO sample. Additional thermal decay steps, between ∼200 and ∼300 K, correlate with other electron traps, in the energy range from ∼0.4 to ∼0.7 eV. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 478-480 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A nonzero potential at the backside of a GaAs substrate causes errors in direct electro-optic measurements. We examine how the backside potential depends on the arrangement of the frontside conductors for digital-like structures. Ground-to-ground spacing, or conductor pitch, most strongly determines the magnitude of this electro-optic error. A single driven line in a 30 μm pitch array of grounded parallel lines on 20 mil GaAs contributes a backside potential 3% of the applied signal.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 153-155 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Rise times for simple pulse-forming circuits are presented. Switching times for present best devices are in the range of 5–15 ps. An equivalent circuit model for resonant tunneling diodes inclusive of space-charge effects and transit time effects in the depletion region is presented. From these models it is shown that switching times are limited by the device RC time constants and are relatively unaffected by the resonant state lifetime or depletion layer transit times. Appropriate figures of merit for switching applications are the device capacitance and peak current density. Less emphasis should be placed on improving the peak-to-valley ratio. Optimally designed devices which maximize the current density should be capable of switching in under 5 ps.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 388-390 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have demonstrated an application of a noninvasive optical probe that can independently measure both free sheet charge density and applied voltage in GaAs devices. Large-signal direct-current measurements of voltage and charge were made on a Schottky diode without any assumption of the device parameters. The measurements are reproducible, and no adjustable parameters have been used to quantitatively measure charge and voltage. In addition to a lateral charge resolution, given by the beam spot size, we have observed a longitudinal resolution due to the standing wave in the probe beam.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 592-594 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have fabricated a GaAs diode sampling head which has a bandwidth of 130 GHz, which is a five times improvement over previous room-temperature designs. This speed is attained with a monolithic sampling head design integrated with two nonlinear transmission lines which serve as the strobe pulse and test signal generators. A 4 ps transition time has been measured with the sampler. We have also measured sinusoidal waveforms to 120 GHz.
    Type of Medium: Electronic Resource
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