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  • Articles: DFG German National Licenses  (3)
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  • Articles: DFG German National Licenses  (3)
Material
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  • 1
    Electronic Resource
    Electronic Resource
    Cryostat for in situ scanning tunneling microscopy studies of film growth at low temperatures (1997)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 68 (1997), S. 4152-4154 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: This article describes a low temperature scanning tunneling microscope (STM) system which is designed to study film growth at very low substrate temperatures (4 K〈TS〈77 K). A simple tripod design with the addition of a sample manipulator, is implemented as the STM head. In this system, a metal film can be thermally deposited on a conducting or an insulating substrate held at cryogenic temperatures and be probed in situ by STM. In situ and room temperature images of a Pb film grown on a 4 K substrate are presented. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1148360
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Monocrystalline silicon carbide nanoelectromechanical systems (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 162-164 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: SiC is an extremely promising material for nanoelectromechanical systems given its large Young's modulus and robust surface properties. We have patterned nanometer scale electromechanical resonators from single-crystal 3C-SiC layers grown epitaxially upon Si substrates. A surface nanomachining process is described that involves electron beam lithography followed by dry anisotropic and selective electron cyclotron resonance plasma etching steps. Measurements on a representative family of the resulting devices demonstrate that, for a given geometry, nanometer-scale SiC resonators are capable of yielding substantially higher frequencies than GaAs and Si resonators. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1338959
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Radio-frequency scanning tunnelling microscopy (2007)
    [s.l.] : Nature Publishing Group
    Nature 450 (2007), S. 85-88 
    Details
    ISSN: 1476-4687
    Source: Nature Archives 1869 - 2009
    Topics: Biology , Chemistry and Pharmacology , Medicine , Natural Sciences in General , Physics
    Notes: [Auszug] The scanning tunnelling microscope (STM) relies on localized electron tunnelling between a sharp probe tip and a conducting sample to attain atomic-scale spatial resolution. In the 25-year period since its invention, the STM has helped uncover a wealth of phenomena in diverse physical ...
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1038/nature06238
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    Paper (German National Licenses)
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