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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 2296-2301 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The evolution of the microstructure during the crystallization of amorphous Fe80B20 alloys has been investigated by small-angle neutron scattering (SANS) and transmission electron microscopy (TEM). Samples with an increasing degree of crystallization were obtained by performing different isothermal heat treatments on melt spun amorphous ribbons. The TEM measurements indicate that the crystallization occurs by nucleation and growth of Fe3B spherulites which include small finely divided α-Fe acicular crystallites. On the basis of the TEM results a model for the quantitative analysis of the SANS data has been formulated. The results show that, due to the high growth velocity of the nucleated particles, only their number increases with increasing annealing time, while their size and internal structure is not dependent on the degree of crystallization. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    Macromolecules 24 (1991), S. 6164-6167 
    ISSN: 1520-5835
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 5584-5593 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The mechanisms of growth of GaN on AlN and AlN on GaN via gas source-molecular beam epitaxy with NH3 as the nitrogen source have been investigated using x-ray photoelectron spectroscopy, low energy electron diffraction, and Auger electron spectroscopy. The growth of GaN on AlN at low temperatures (650–750 °C) occurs via a Stranski–Krastanov 2D→3D type mechanism with the transition to 3D growth occurring at (approximate)10–15 Å. The mechanism changes to Frank van der Merwe (FM)/layer-by-layer growth above 800 °C. The growth of AlN on GaN occurred via a FM layer-by-layer mechanism within the 750–900 °C temperature range investigated. We propose a model based on the interaction of ammonia and atomic hydrogen with the GaN/AlN surfaces which indicates that the surface kinetics of hydrogen desorption and ammonia decomposition are the factors that determine the GaN growth mechanism. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 4483-4490 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A detailed examination of the valence band discontinuity (ΔEv) formed at the (0001), (0001¯), and (11¯00) interfaces between 2H–AlN and 6H–SiC has been conducted using x-ray and UV photoelectron spectroscopies. The ΔEv was observed to range from 0.6–2.0 eV depending on the growth direction (i.e., AlN on SiC vs SiC on AlN), as well as the crystallographic orientation, cut of the SiC substrate (i.e., on versus off axis), and SiC surface reconstruction and stoichiometry. A ΔEv of 1.4–1.5 eV was observed for AlN grown on (3×3) (0001)Si6H–SiC on-axis substrates; a ΔEv of 0.9–1.0 eV was observed for off-axis substrates with the same surface reconstruction. The values of ΔEv for AlN grown on ((square root of)3×(square root of)3)R30°(0001) 6H–SiC on-and-off-axis substrates were 1.1–1.2 eV. A larger valence band discontinuity of 1.9–2.0 eV was determined for 3C–SiC grown on (0001) 2H–AlN. Smaller values of ΔEv of 0.6–0.7 and 0.8–0.9 eV were observed for AlN grown on on-axis (0001¯)C and (11¯00)6H–SiC substrates, respectively. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 5248-5260 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Successful ex situ and in situ cleaning procedures for AlN and GaN surfaces have been investigated and achieved. Exposure to HF and HCl solutions produced the lowest coverages of oxygen on AlN and GaN surfaces, respectively. However, significant amounts of residual F and Cl were detected. These halogens tie up dangling bonds at the nitride surfaces hindering reoxidation. The desorption of F required temperatures 〉850 °C. Remote H plasma exposure was effective for removing halogens and hydrocarbons from the surfaces of both nitrides at 450 °C, but was not efficient for oxide removal. Annealing GaN in NH3 at 700–800 °C produced atomically clean as well as stoichiometric GaN surfaces. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 2086-2090 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: X ray and ultraviolet photoelectron spectroscopies have been used to determine the heterojunction valence band discontinuity at the (0001) GaN/AlN interface. Type I discontinuity values of 0.5±0.2 eV were determined for GaN grown on AlN at 650 °C and 0.8±0.2 eV for GaN grown on AlN at 800 °C. These values are critically evaluated with respect to film quality, the results of other experimental studies, and theory. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 6042-6048 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High-resolution (±1°) x-ray photoelectron diffraction (XPD) patterns were obtained along high symmetry azimuths of the (3×3) and ((square root of)3×(square root of)3)R30° reconstructed (0001)Si 6H–SiC surfaces. The data were compared to XPD patterns obtained from (7×7) Si (111) as well as to models proposed for the (3×3) and ((square root of)3×(square root of)3)R30° 6H–SiC reconstructions. Forward scattering features similar to those observed from the (7×7) Si (111) were also observed from the ((square root of)3×(square root of)3)R30° 6H–SiC (0001)Si surface. Additional structures were found and attributed to the substitution of carbon atoms for silicon. Unlike (1×1) and (7×7) Si (111) surfaces, the XPD patterns of (3×3) and ((square root of)3×(square root of)3)R30° SiC (0001)Si surfaces are different which is due to the presence of an incomplete bilayer of Si on the (3×3) surface. The most significant difference with the Si system is the equivalence of the [101¯0] and [011¯0] azimuths in the (3×3) structure. These results are consistent with a faulted Si bilayer stacking sequence which was proposed based on scanning tunneling microscopy observations. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    Inorganic chemistry 17 (1978), S. 3306-3307 
    ISSN: 1520-510X
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 95 (1991), S. 4173-4176 
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    Oxford, UK : Blackwell Science Ltd
    Child 31 (2005), S. 0 
    ISSN: 1365-2214
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine , Psychology
    Notes: Background  With parents more involved in their child's day-to-day care, concepts of family-centred service (FCS) are increasingly adopted in children's health and rehabilitation service organizations.Methods  In this paper, we report the results of a study to develop and evaluate educational materials for parents, service providers and health sciences students about FCS. The materials focus on the nature and philosophy of FCS, and the practical skills and systemic changes required for its implementation.Results  Thirty-six participants (12 families, 12 service providers and 12 rehabilitation science students) were randomly assigned to receive one of the six FCS educational packages, each containing three FCS educational sheets. Participants’ ratings of the format and content, and the impact of the FCS Sheets were very high, with overall means above 5.0 on a 7-point scale. Using a mixed model analysis, we found significant differences in participants’ ratings of familiarity with the materials (students were less familiar than service providers). After statistical adjustment for familiarity, there were no significant differences between the groups or the packages on ratings of format and content or impact.Conclusions  There were no significant differences in the way in which the participant groups rated the impact of the FCS Sheets and the specific packages did not have an effect on the participants’ ratings. The FCS educational materials, even those less familiar to participants, were rated highly on format and content, and impact. Results indicate that the material was perceived to be important to each group, and was formatted and written in a way that was easy to understand. This finding counters current recommendations in the knowledge transfer literature that suggest different versions should be written for different target groups.
    Type of Medium: Electronic Resource
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