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  • Electronic Resource  (6)
  • 1985-1989  (5)
  • 1980-1984  (1)
  • 1986  (5)
  • 1981  (1)
Material
  • Electronic Resource  (6)
Years
  • 1985-1989  (5)
  • 1980-1984  (1)
Year
  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 1218-1220 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The use of a sputtered silicon film as a new type of etching mask is reported for the first time. Its desirable properties arise because of similar material characteristics (thermal expansion coefficient, crystal structure, smaller misfit factors) and different etching behavior as compared to gallium arsenide. These properties are studied and utilized in the fabrication of GaAs/GaAlAs double heterostructure (DH) ridge waveguide devices.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 59 (1986), S. 3543-3548 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: X-ray structures and magnetic properties of sputtered osmium-doped iron oxide thin films prepared under various deposition conditions have been analyzed by x-ray diffraction and vibrating sample magnetometer techniques. Results show that the crystalline phase, macrostain, and grain size play important roles in the coercivity Hc, saturation magnetization 4πMs, and squareness S* of the films. Ferrimagnetic γ-Fe2O3 and/or α-Fe of 400-A(ring) grain size or less were mainly responsible for the good coercivities and magnetizations of the films, i.e., Hc=700–1000 Oe and 4πMs=4000–6000 G. A film which contained appreciable antiferromagnetic α-Fe2O3 phase had much lower Hc(=130 Oe) and 4πMs(=1000 G). Correlation between macrostrain εn, and S* has been observed where the film with large compressive strains had low S*=0.69, and those with little or zero εn gave good squareness S*=0.79–0.81.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    Copenhagen : International Union of Crystallography (IUCr)
    Applied crystallography online 19 (1986), S. 92-100 
    ISSN: 1600-5767
    Source: Crystallography Journals Online : IUCR Backfile Archive 1948-2001
    Topics: Geosciences , Physics
    Notes: Results using parallel-beam polycrystalline geometry at the Stanford Storage Ring are compared with conventional X-ray tube focusing. The PC-automated instrumentation included a pair of vertical-scan diffractometers for wavelength selection using a Si(111) channel monochromator and for powder specimens which may be measured in reflection or transmission. The dependence of intensity, profile shape, width and position on instrument parameters is described. All the profiles in patterns of well crystallized specimens with a selected receiving slit are symmetrical and primarily Gaussian with nearly the same width, thereby greatly simplifying the algorithms and programs for profile fitting and interpretation of profile broadening. The easy wavelength selection allows the use of a wavelength just longer than the absorption edge of elements in the sample to obtain maximum P/B ratio, and short wavelengths permit access to very high hkls. Because of the absence of the Kα doublet and the simple symmetrical profile shape the resolution need not be as good as in focusing geometry to achieve comparable overlap separation. The average precision of lattice-parameter determination was Δd/d = 5.6 × 10−5 using forward reflections.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    Springer
    Hyperfine interactions 28 (1986), S. 887-890 
    ISSN: 1572-9540
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    New York, NY [u.a.] : Wiley-Blackwell
    X-Ray Spectrometry 15 (1986), S. 245-250 
    ISSN: 0049-8246
    Keywords: Chemistry ; Analytical Chemistry and Spectroscopy
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Physics
    Notes: A systematic study has been made of the line shapes of x-ray fluorescence spectra obtained with a conventional spectrometer using various analysing crystals and experimental conditions. It was found that each component of the K and L spectra can be closely matched by the sum of an asymmetric Gaussian and Lorentzian, namely the pseudo-Voigt function. Analysis of spectra in the 0.4-3 Å range showed that profile shapes are functions of 2θ, the analysing crystal and the collimating system, but nearly independent of chemical state, specimen thickness and operating voltage. For a fixed analysing crystal and collimator, larger values of 2θ exhibited lower Gaussian content and higher asymmetry. Using an LiF (200) crystal, spectra obtained for 2θ° 〈 20° were found to be pure Gaussian and symmetric, indicating the dominance of the instrumental effects. As 2θ increased, the Lorentzian component or the spectral effects emerged and the shapes became asymmetric. The analysing crystal has a pronounced effect on the experimental profile shapes. Use of a graphite (002) instead of an LiF (200) crystal yielded profiles three times wider and with twice the Lorentzian content. The differences between PET and LiF crystals were smaller. The accuracy achieved in using the pseudo. Voigt function to describe the experimental XRF spectra demonstrates the convenience and effectiveness of the function in obtaining precise fluorescence intensities, especially in the case of poor counting statistics and/or overlaps.
    Additional Material: 3 Ill.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    New York, NY [u.a.] : Wiley-Blackwell
    X-Ray Spectrometry 10 (1981), S. 28-30 
    ISSN: 0049-8246
    Keywords: Chemistry ; Analytical Chemistry and Spectroscopy
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Physics
    Notes: An improved version of the LAMA program for the quantitative analysis of composition and mass thickness of thin film materials by X-ray fluorescence (XRF) has been developed. The divergence and slow convergence problems occasionally experienced with the LAMA-1 program have been eliminated by using the linear approximation method and the algorithm of simultaneous refinement of composition and thickness to greatly increase its capability and performance. A study of over a hundred simulated thin films showed that the LAMA-2 program converged much faster than LAMA-1 and gave better accuracy. The efficiency of the program has been improved to the point where it is feasible to operate on a minicomputer.
    Additional Material: 2 Ill.
    Type of Medium: Electronic Resource
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