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  • Electronic Resource  (2)
  • 1995-1999  (2)
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  • Electronic Resource  (2)
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  • 1
    Electronic Resource
    Electronic Resource
    Formation of β-Si3N4 by nitrogen implantation into SiC (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 7018-7021 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Polycrystalline β-SiC samples were implanted with 50 keV 15N ions with fluences ranging from 3×1017 to 1.5×1018 ions/cm2 at elevated temperature up to 1100 °C. Nitrogen depth profiles were measured as a function of implantation temperature and annealing temperature using nuclear reaction analysis, Rutherford backscattering spectroscopy, and Auger electron spectroscopy. It was found that the maximum concentration and the width of nitrogen depth profiles implanted at 1100 °C were reduced distinctly in comparison with the profiles implanted below 930 °C or annealed at 1100 °C. The redistribution of nitrogen implanted in SiC at 1100 °C was ascribed to the formation of β-Si3N4 crystallites in SiC, which was confirmed by x-ray diffraction at glancing incidence. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360470
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  • 2
    Electronic Resource
    Electronic Resource
    Nitrogen ion implantation with energy scanning mode into Zr (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 1500-1503 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: To study effects of ion implantation with the energy scanning mode on the surface structure and the depth profile, Zr samples were implanted with 15N2 ions, where ion energy was scanned in the range of 70–100 and 70–130 keV using a computer-controlled power supply at an interval of 2 keV while monitoring the ion current of the sample. After the implantation of a total fluence of 3.5×1017 ions/cm2, the depth profiles of 15N2 ions in Zr were measured by nuclear reaction analysis of 15N(p,αγ)12C at 429 keV and the surface was observed by scanning electron microscopy. It was found that the implanted surface structure strongly depended on the implantation mode, and blistering induced by high fluence implantation of nitrogen could be completely avoided with the implantation mode of increasing energy gradually. The depth profiles were satisfactorily in agreement with the prediction by Monte Carlo simulation. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360240
    Library Location Call Number Volume/Issue/Year Availability
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    Paper (German National Licenses)
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