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  • Electronic Resource  (3)
  • 1995-1999  (3)
  • 1
    Electronic Resource
    Electronic Resource
    Moss–Burstein and plasma reflection characteristics of heavily doped n-type InxGa1−xAs and InPyAs1−y (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 452-458 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Degenerately doped (〉1019 cm−3) n-type InxGa1−xAs (x∼0.67) and InPyAs1−y (y∼0.65) possess a number of intriguing electrical and optical properties relevant to electro-optic devices and thermophotovoltaic devices in particular. Due to the low electron effective mass of these materials (m*〈0.2) and the demonstrated ability to incorporate n-type dopants into the high 1019 cm−3 range, both the Moss–Burstein band gap shift and plasma reflection characteristics are particularly dramatic. For InGaAs films with a nominal undoped band gap of 0.6 eV and N=5×1019 cm−3, the fundamental absorption edge increased to 1.27 eV. InPAs films exhibit a shorter plasma wavelength (λp∼5 μm) in comparison to InGaAs films (λp∼6 μm) with similar doping concentrations. The behavior of the plasma wavelength and the fundamental absorption edge are investigated in terms of conduction band nonparabolicity and Γ-L valley separation using detailed band structure measurements and calculations. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.370751
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  • 2
    Electronic Resource
    Electronic Resource
    An atomistic view of adhesion (1996)
    Springer
    Journal of computer-aided materials design 3 (1996), S. 169-172 
    Details
    ISSN: 1573-4900
    Keywords: Adhesion ; Quantum mechanics ; Impurity effects ; Universal behavior
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Summary Some results on first-principles calculations of adhesion are reviewed. The universal relationship between adhesive energy and interfacial spacing, as well as significant effects of impurities on adhesion are discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01185651
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    First-principles study of the α-Al2O3(0001)/Cu(111) interface (1996)
    Springer
    Interface science 3 (1996), S. 289-302 
    Details
    ISSN: 1573-2746
    Keywords: adhesion ; metal/ceramic bonding ; quantum mechanical computations
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Adhesive energetics and interfacial electronic structures have been computed from first principles for the Cu/Al2O3 interface. Recent transmission electron microscopy results of Cu grown by molecular beam epitaxy on Al2O3(0001) were helpful in modelling the interfacial atomic structure. We found that Al2O3(0001) relaxation effects can lower the work of adhesion W ad by over a factor of 3. Our computed W ad value is in reasonably good agreement with experiment, being somewhat larger, as expected from our assumption of a coherent interface. One might begin to understand this metal/ceramic adhesion as a competition between Cu and Al for oxide formation, which is easily won by Al. However this simple picture is complicated by several indications of a significant metallic/covalent component to the Cu/Al2O3 adhesive bond.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00194707
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    Paper (German National Licenses)
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