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  • Electronic Resource  (5)
  • 1995-1999  (5)
  • 1
    Electronic Resource
    Electronic Resource
    Investigation of the epitaxial growth mechanism of ZnTe on (001) CdTe (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 3104-3110 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The first stages of the growth of highly strained ZnTe on (001) CdTe are investigated by reflection high energy electron diffraction, HRTEM (high resolution transmission electron microscopy), x-ray photoelectron spectroscopy, and x-ray double diffraction. A precise study of the factors influencing the critical thickness is presented, with emphasis on the effect of Zn pre-exposure of the CdTe surface on the subsequent ZnTe growth. Below the critical thickness small lattice distortions attributed to a nontetragonal elastic distortion are detected. An exposure of the (001)CdTe surface to a Zn flux leads to the desorption of the Cd atoms present on the top of the surface and to the formation of a c(2×2) reconstructed surface with half a monolayer of Zn on the top of the surface. Finally, the morphology of an ultrathin strained ZnTe layer embedded in a (001)CdTe matrix will be discussed using results obtained from analysis of the digitized HRTEM image. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358661
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  • 2
    Electronic Resource
    Electronic Resource
    Nitrogen acceptors confined in CdZnTe quantum well structures (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 2070-2073 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Nitrogen acceptors confined in a CdZnTe single quantum well, grown by molecular beam epitaxy, are investigated by different optical methods. The transitions related to nitrogen acceptors confined in the well are observed in the doping range between 1017 and 1018/cm3. The temperature and excitation intensity dependence of the nitrogen-related transitions in photoluminescence spectra indicates that these transitions correspond to the nitrogen acceptor bound excitons and to free electron to neutral nitrogen acceptor recombination. The binding energy of nitrogen acceptors confined in an 130-A(ring)-wide Cd0.96Zn0.04Te/Cd0.86Zn0.12Te structure is deduced to be 51.7±0.5 meV from this study. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361063
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  • 3
    Electronic Resource
    Electronic Resource
    Nitrogen doping of tellurium-based II–VI compounds during growth by molecular beam epitaxy (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 2972-2974 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report p-type doping of tellurium-based compounds (CdTe, ZnTe) and alloys (CdMgTe, ZnMgTe, ZnCdTe) in molecular beam epitaxy using nitrogen atoms from a plasma source. The dominant shallow acceptor, as deduced from transport and optical measurements, has an ionization energy close to the effective mass value. A systematic decrease of the doping efficiency is observed as the Zn content decreases. We discuss the key role of the Zn content in the material in the framework of two factors: (i) local strain induced in the lattice by the presence of nitrogen and (ii) formation of compounds involving nitrogen atoms. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114829
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  • 4
    Electronic Resource
    Electronic Resource
    n and p Type Doping Control of CdTe and CdZnTe Epilayers and CdTe/CdZnTe Quantum Structures (1995)
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 182-184 (Feb. 1995), p. 23-28 
    Details
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/01/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.182-184.23.pdf
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  • 5
    Electronic Resource
    Electronic Resource
    Weak localization and interaction in doped CdTe (1999)
    Springer
    The European physical journal 8 (1999), S. 293-300 
    Details
    ISSN: 1434-6036
    Keywords: PACS. 72.15.Rn Quantum localization - 72.80.Ey III-V and II-VI semiconductors - 74.50.+r Proximity effects, weak links, tunneling phenomena, and Josephson effects
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract: We study weak localization and electron interaction in CdTe:In by low temperature magnetoconductance experiments to quantify the phase breaking length and the importance of interactions in CdTe. Then we study superconducting contacts to CdTe:In by transport measurements at very low temperature. The conductance-voltage characteristics of the superconducting contact exhibits the main features of a SIN junction, with a superimposed zero bias anomaly. This anomaly in the density of states of CdTe is very sensitive to magnetic field and probably induced by the proximity of the superconducting contact.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/s100510050693
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