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  • Electronic Resource  (126)
  • 1990-1994  (81)
  • 1985-1989  (43)
  • 1950-1954  (2)
  • 1
    Electronic Resource
    Electronic Resource
    van der Waals epitaxial growth of thin BiI3 films on PbI2 and CdI2 substrates by a hot wall method (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 2735-2738 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A hot wall technique was applied to grow very thin BiI3 single crystals about 100–1000 A(ring) thick by the achievement of low-temperature growth. The so-called van der Waals epitaxy became possible by employing layered materials such as PbI2 and CdI2 as substrate. BiI3 thin films grown with optimized conditions exhibited a sharp band-edge direct exciton absorption line of 30-meV half-width, which is much sharper than that of a single crystal grown by a conventional method reported so far. The transmission electron diffraction measurements were carried out on the films. It was revealed that highly perfect single crystals with a 4-mm diameter size were obtained.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346449
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  • 2
    Electronic Resource
    Electronic Resource
    Superconductivity and crystallinity of Ba2Y1Cu3O7−δ thin films prepared by pulsed laser deposition with substrate bias voltage (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 6331-6335 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Substrate bias voltages were found to be significantly effective in preparing high-quality laser-deposited superconducting Ba2Y1Cu3O7−δ films at reduced substrate temperatures. The zero-resistance temperature of the biased films, positive bias being more effective than negative, decreased very slightly when the substrate temperature was lowered, whereas that of the unbiased films decreased considerably. In addition, the surface morphology and c-axis orientation have been improved by applying substrate bias voltages. Bias voltages within ±500 V hardly affect the composition of the resulting films so that stoichiometric films have been obtained from a stoichiometric target. A time-resolved optical observation revealed that a short time emission, probably being oxygen plasma, occurred in a few μs after the laser pulse impingement. The improvement in crystallinity of the resulting films is attributed to this emission. The velocity of emissive species in the plume was determined to be 6×105 cm/s. Under positive-biased conditions slower components with a velocity of 3×105 cm/s or less were also observed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346877
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  • 3
    Electronic Resource
    Electronic Resource
    Origins of charged particles in vapor generated by electron-beam evaporation (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 4548-4555 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The origins of electrons and ions in uranium vapor generated by electron-beam evaporation have been determined. Measurements were made for the electron emission current due to high-energy electron-beam irradiation on a uranium surface (backscattered electrons, etc.), thermionic emission current from the melt surface, and electron current due to vapor ionization. Comparison of these currents confirmed that vapor ionization was the main electron generation process at evaporation surface temperatures above 2200 K. The ionized vapor formed a weakly ionized plasma of very low electron temperature: The degree of ionization ≤1%, electron temperature ≤0.3 eV. The electron-impact ionization process contributed mainly to plasma formation. Beam electrons, their backscattered electrons, and secondary electrons from the beam-irradiated uranium surface were the source electrons for this process. Thermal ionization was the next major process. In addition to the plasma formation model, plasma behavior in vapor was described by a one-dimensional symmetric expansion model. The calculated degree of ionization was in good agreement with the measured value over a wide range of evaporation temperatures and electron-beam currents.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352334
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  • 4
    Electronic Resource
    Electronic Resource
    Orientational correlation in liquid phosphorous tribromide studied by pulsed neutron total scattering (1990)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 92 (1990), S. 5486-5490 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Structure factor Sm(Q) of liquid phosphorous tribromide (PBr3) has been measured at room temperature by means of pulsed neutron total scattering technique. Characteristic features of the experimental Sm(Q) are analyzed in terms of preferred orientations introduced between the nearest neighbors as well as a packing of effectively uncorrelated molecules. The preferred orientation estimated in this analysis is such that a top (or a P atom) of pyramidal shape of each PBr3 molecule points in nearly the same direction.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.458527
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  • 5
    Electronic Resource
    Electronic Resource
    Sequential deposition growth of Bi-Sr-Ca-Cu-O systems observed using in situ reflection high-energy electron diffraction (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 654-655 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The crystal growth mechanism in Bi-Sr-Ca-Cu-O thin films has been revealed by sequential deposition with an electron cyclotron resonance (ECR) oxygen plasma using in situ reflection high-energy electron diffraction (RHEED) observation. A series of RHEED patterns presents clear evidence that the unit cell of the Bi-Sr-Ca-Cu-O structure is completed as the Bi layers have sandwiched Sr, Ca, and Cu layers. This crystalline process is not an atomic layer by atomic layer growth but a "unit cell by unit cell'' growth.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104559
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  • 6
    Electronic Resource
    Electronic Resource
    Epitaxial growth of diamond thin films on cubic boron nitride {111} surfaces by dc plasma chemical vapor deposition (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 563-565 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Diamond thin films have been grown epitaxially on high-pressure synthesized cubic boron nitride (c-BN) particles by using dc plasma chemical vapor deposition. At the early growth stage of the film on c-BN{111} surfaces, the island structure is observed and the number density of islands is about 1011 cm−2. The growth and the coalescence of islands are also found by scanning electron microscopy observation. The continuous film is obtained at the thickness of about 2000 A(ring) and the surface of the film is rather smooth. The Raman peak of the epitaxial diamond film shows the shift toward the lower wave number due to the tensile stress involved in the film.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103647
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  • 7
    Electronic Resource
    Electronic Resource
    Variable-energy positron-beam studies of SiO2/Si irradiated by ionizing radiation (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 473-475 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Variable-energy positron-beam studies have been carried out on Si with a 1.61 μm overlayer of SiO2 irradiated by x ray and γ ray up to the dose of 5×105 R. The Doppler broadening of annihilation photons was found to be strongly influenced by x-ray irradiation, and the effect was extended homogeneously over the entire oxide layer. A trapping model which neglects positron diffusion effects was applied to the dependence of the line shape parameter S on incident positron energy.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100616
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  • 8
    Electronic Resource
    Electronic Resource
    Electrical properties of hydrogenated amorphous silicon layers on a polymer film substrate under tensile stress (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 1678-1680 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electrical properties of hydrogenated amorphous silicon (a-Si:H) layers on a polyethylene terephthalate (PET) film were studied under tensile stress. As the a-Si:H layers were stretched about 1.5%, dark conductivity and photoconductivity decreased gradually at first and then steeply beyond a critical strain. It was found that the former behavior was caused by a piezoresistance effect and the latter was attributed to breaking weak SiSi bonds, as shown by an increase of the electron spin resonance (ESR) intensity of Si dangling bonds. These changes of conductivity and ESR signal intensity were almost completely restored by annealing the a-Si:H layer at 150 °C for 1 h while relaxed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101431
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  • 9
    Electronic Resource
    Electronic Resource
    Laser-induced fluorescence measurement and analytical model for the reaction probability of CF2 on Si (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 2775-2777 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We investigate an analytical model for concentration profiles of reactive gas-phase species adjacent to surfaces, as determined by optical probe techniques. The model is illustrated with measurements of CF2, detected by laser-induced fluorescence, above silicon and other substrates. Conditions under which the model is applicable are discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337110
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  • 10
    Electronic Resource
    Electronic Resource
    Magneto-optical properties of Fe-B-F films (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 3250-3252 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Films have been preprared by sputtering over a wide range of compositions in the Fe-B-F system. Fluorine was supplied by rf sputtering from an FeF3 target, and Fe-B by dc sputtering from arc-melted targets. Most of the samples were amorphous, although some contained a relatively small fraction of crystalline FeF2. The films were ferromagnetic, with Curie temperatures above room temperature and with room-temperature saturation magnetizations of 60 to 150 emu/g. Large Faraday coefficients, up to 105 deg/cm at 633 nm and fairly large Kerr rotations were observed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.338925
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