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  • Electronic Resource  (46)
  • 1990-1994  (21)
  • 1985-1989  (25)
  • 1
    Electronic Resource
    Electronic Resource
    Development of the Gd(0001) band structure with film thickness : The 5th Joint MMM−Intermag Conference (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 6565-6567 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: By growing gadolinium films on W(110), it has been possible to observe the development of the Gd(0001) band structure with increasing film thickness. The changes in the 5d bands as a result of exposure to oxygen or the development of the valence-band structure with increasing film thickness lead to changes in the 5p multiplet oscillator strengths. These changes are a result of the influence of the band structure upon the final-state effects that give rise to such multiplet structures. This study provides conclusive evidence that there is a 5d contribution to the shallow 5p multiplet photoemission core-level structure.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349858
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  • 2
    Electronic Resource
    Electronic Resource
    High power microwave generation from a tunable radially extracted vircator (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 1247-1252 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High power microwaves in the dominant TE10 mode emitted from the radially extracted vircator were studied experimentally at the diode voltages from 660 kV up to 1.2 MV and at diode currents from 37 up to 88 kA. The dominant microwave source is in the region of the virtual cathode. The return-current rods on the virtual cathode side of the anode narrows the output microwave frequency. There are dominant frequencies observed in the experiments. For example, three dominant narrow-band microwave pulses were observed at 8.63±0.05, 9.75±0.03, and 10.53±0.03 GHz. They are tunable and scaled linearly with the diode current at the inflection point. All the observed dominant frequencies are in good agreement with the scaling law f=(4.77/d)ln[γ0+(γ20−1)1/2] derived either from the two-dimensional virtual-cathode oscillation or from the one-dimensional harmonic reflexing-electron oscillation. This agreement also confirms that these two oscillations in our vircator generate nearly the same frequency. The maximum observed powers are 120 MW at 8.63 GHz, 75 MW at 9.75 GHz, and 60 MW at 10.53 GHz.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347310
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  • 3
    Electronic Resource
    Electronic Resource
    High-precision harmonic magnetic-field measurement and analysis using a fixed angle Hall probe (1994)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 65 (1994), S. 2548-2555 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A special theoretical concept involving the harmonic magnetic-field measurement and analysis method using a fixed angle Hall probe was developed at the Synchrotron Radiation Research Center (SRRC) for measuring as well as analyzing the triple bending achromat magnets of the storage ring. The method can be used to simulate the harmonic magnetic-field calculation of the two-dimensional (2D) "magnet'' program. This method has a quite simple mechanism. The Hall plate was fixed at a 0° angle with respect to the horizontal plane of magnet to measure only the vertical field. Additionally, the 2D nonlinear least-square fitting was used to fit the mapping data so as to find the normal and skew multipole field strength. If necessary, the angle of Hall probe could be rotated 90° precisely for measuring the horizontal field. Consequently, the skew dipole field could be obtained. A real-time Hall-probe automatic magnetic-field measurement system was also developed for fulfilling the concept of the harmonic field measurement. Some special mapping trajectories for different kinds of magnets were discussed to match this special theoretical concept with the analysis methodology. This was done so as to obtain the reliable and accurate harmonic field strength. The accuracy and precision of the harmonic field strength measurement and analysis of this method being better than ±0.01% was confirmed by experimental results.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1144650
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  • 4
    Electronic Resource
    Electronic Resource
    Deposition and photoconductivity of hydrogenated amorphous silicon films by the pyrolysis of disilane (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 59 (1986), S. 1319-1322 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The thermal decomposition of disilane (Si2H6) in a hydrogen or helium flow has been used for the deposition of hydrogenated amorphous-silicon (a-Si:H) films on the surface of Corning 7059 glass substrates at 450–500 °C. The reaction product consists of monosilane and trisilane in addition to the unreacted disilane and ethylsilane (the major impurity in commercial disilane). The concentration of Si2H6 in the reaction mixture has been found to strongly affect the deposition rate and the photoconductivity of a-Si:H films. At a given Si2H6 concentration, the deposition rate of a-Si:H films increases exponentially with temperature. At a given substrate temperature, the AM1 conductivity of a-Si:H films increases with increasing Si2H6 concentration and approaches 10−5 Ω cm−1 at Si2H6 concentrations higher than about 4%, and the conductivity ratio in better films is about 105. The conductivities of CVD a-Si:H films have been found to show negligible change under illumination over a period of several days. The optical band gap of a-Si:H films has been determined to be 1.65–1.68 eV. The doping of a-Si:H films with arsenic and boron has been carried out, and their activation energies determined.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.336525
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  • 5
    Electronic Resource
    Electronic Resource
    Effect of surface composition observed by Auger electron spectroscopy on magnetization and magnetostriction of NiFe and NiFeRh thin films (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 1230-1233 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The saturation magnetization, 4πMs, and the magnetostriction constant, λs, of Ni81Fe19, Ni81Fe19/Ta, and Ni72Fe17Rh11/Ta thin films were studied as a function of film thickness before and after annealing at 250 °C in vacuum for 2 h. For films of thickness t〈200 A(ring), 4πMs and λs were found to be strongly dependent on film thickness with an even larger variation after annealing. For all films, at t=60A(ring), 4πMs decreases by 20%–30% compared to bulk value. The value of λs is in the range of 10−6 for all films and shows a complex behavior, including a change of sign, depending on film composition as well as Ta capping. Auger depth profiling of uncapped films has shown the presence of an Fe-rich surface oxide layer whose composition changed and thickness increased after annealing. The composition and thickness of the Ta-film interface layer in the Ta-capped films did not change with annealing. The presence of such layers, at the film surface, Ta-film interface, and film-substrate interface, of different composition and magnetic properties from the film bulk, can explain the observed behavior of 4πMs and λs.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.343014
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  • 6
    Electronic Resource
    Electronic Resource
    Magnetic and structural properties of high rate dual ion-beam sputtered NiFe films (invited) (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 3520-3525 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: NiFe films in the thickness range of 300 A(ring) to 8 μm with excellent magnetic properties and thickness uniformity have been prepared using a newly developed high rate (up to 1000 A(ring)/min) dual ion beam sputtering system. Deposition conditions such as the ion assist voltage, the target orientation and the partial pressure of nitrogen have been optimized to reduce coercivity Hc and stress as well as to improve film adhesion and film thermal stability. The annealing effects on Hc, the anisotropy field Hk, as well as the resistivity of the NiFe films were studied. X-ray diffraction and transmission electron microscopy techniques were used to characterize the microstructures of the films and were correlated with their magnetic properties. These ion-beam sputtered NiFe films have excellent magnetic, electrical, mechanical, and microstructural properties to make them suitable for thin-film head applications.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.338713
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  • 7
    Electronic Resource
    Electronic Resource
    Potential flow model for the hydromagnetic Rayleigh–Taylor instability in cylindrical plasmas (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 95-100 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A potential flow model has been developed to study the linear behavior of the hydromagnetic equivalent of the Rayleigh–Taylor instability in imploding cylindrical plasmas. Ordinary differential equations are obtained for both (r,z) and (r,θ) disturbances. The model allows the study of the dynamic effects of the moving plasma on the development of the instability. The perturbation equations separate into a geometric part associated with the motion of the interface and a nongeometric part associated with the stability of the interface. In both planes the geometric part shows growth of perturbations for imploding plasmas. The surface is also unstable in both planes for plasmas being imploded by magnetic fields. Analytic solutions are obtained for constant acceleration. These show that the short wavelength perturbations that are most damaging in the (r,z) plane are not affected by the motion of the interface. In the (r,θ) plane the growth of longer wavelength disturbances is affected by the interface motion.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.339112
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  • 8
    Electronic Resource
    Electronic Resource
    High-power 630–640 nm GaInP/GaAlInP laser diodes (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 61 (1992), S. 892-894 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High-power visible laser diodes operating at 630–640 nm have been demonstrated. The devices have a GaInP/GaAlInP single quantum well, graded-index separate confinement heterojunction. For 100 μm broad stripe uncoated lasers, threshold current densities of 1.06 KA/cm2 and pulsed output powers as high as 1.5 W/facet (total 3 W) at room temperature were achieved by optimizing the device cavity length. By coating rear facets with high-reflectivity coatings, threshold current densities were reduced to 750 A/cm2, and output powers of 1.95 W were obtained. Unusual differential quantum efficiency versus cavity length characteristics were observed and are attributed to carriers spillover from the spacer/waveguide regions into the cladding layers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.107747
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  • 9
    Electronic Resource
    Electronic Resource
    Diffusion coefficients of atomic chlorine in inert molecules (1987)
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 91 (1987), S. 2351-2352 
    Details
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/j100293a029
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  • 10
    Electronic Resource
    Electronic Resource
    Correction. New Synthetic Technology for the Construction of Oxocenes (1986)
    s.l. : American Chemical Society
    Journal of the American Chemical Society 108 (1986), S. 5041-5041 
    Details
    ISSN: 1520-5126
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/ja00276a607
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