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  • Electronic Resource  (36)
  • 1990-1994  (32)
  • 1965-1969  (4)
  • 11
    Electronic Resource
    Electronic Resource
    Suppression of threading dislocation generation in highly lattice mismatched heteroepitaxies by strained short-period superlattices (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 2067-2069 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The threading dislocation density was remarkably reduced in highly lattice mismatched heteroepitaxies of the In0.5Ga0.5As/GaAs(001) and GaAs/GaP(001) systems. The two-dimensional growth mode was obtained even after the lattice relaxation by applying the strained short-period superlattices. The misfit dislocations aligned along the 〈110〉 direction were mainly generated at heterointerfaces. The misfit strain was relieved by the generation of the misfit dislocations in the absence of three-dimensional island growth. It was found that the generation of threading dislocations is effectively suppressed by introducing strained short-period superlattices at the initial growth stage of highly lattice mismatched heteroepitaxies.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.110594
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  • 12
    Electronic Resource
    Electronic Resource
    YBa2Cu3O7−y microbridges on Y2O3/yttria-stabilized zirconia/SiO2/Si(100) (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 61 (1992), S. 2709-2711 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: YBa2Cu3O7−y (YBCO) microbridges have been fabricated on a SiO2/Si substrate using Y2O3/YSZ (yttria-stabilized zirconia) buffer layer. Using polycrystalline silicon layer overlaid on oxidized Si(100) single crystal, the bridge is microprocessed by means of electron beam lithography and dry etching. The fabricated configuration serves as a mask for depositing YSZ and Y2O3 double buffer layers. The YBCO layer is deposited on the substrate by means of laser ablation deposition. The dimension of the bridge is 1.7 μm wide and 1.3 μm long. The microbridge junctions show a critical temperature of 86 K, and microwave-induced steps are observed indicating the presence of a Josephson junction-type behavior. The IcRn product is 0.5 mV at 30 K.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.108483
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  • 13
    Electronic Resource
    Electronic Resource
    Initial growth mechanism of AlAs on Si(111) by molecular beam epitaxy (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 2983-2985 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The initial growth mechanism of AlAs-on-Si(111) substrate was investigated. The suppression of three-dimensional growth was successfully realized at the initial growth stage, which is difficult in the growth of GaAs on Si. The initial growth process was clarified, in which the lattice relaxation proceeded gradually. It took about 30 ML to relax the lattice completely at the growth temperature of 400 °C. GaAs was grown in the two-dimensional mode on the completely relaxed AlAs on the Si(111) substrate.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.105819
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  • 14
    Electronic Resource
    Electronic Resource
    Epitaxial growth and properties of YBa2Cu3O7−y/LaSrGaO4/YBa2Cu3O7−y trilayer structures (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 779-781 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the successful synthesis of insulating LaSrGaO4(LSGO) thin films and YBa2Cu3O7−y(YBCO)/LSGO heteroepitaxial multilayer structures using a pulsed laser deposition technique. SrTiO3(STO)(100) was used as a substrate. The formation of highly c-axis oriented YBCO/LSGO/YBCO trilayer structures is demonstrated. Epitaxial YBCO films on LSGO//STO and LSGO/YBCO//STO have a zero resistance temperature of 88.5 and 88.3 K, respectively. Sandwich-type YBCO/LSGO/YBCO junctions were produced by a suitable patterning technique. The observed (dI/dV)-V characteristics exhibit a clear single gap structure (width ∼26 meV) at temperatures below 30 K.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.111011
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  • 15
    Electronic Resource
    Electronic Resource
    a-axis oriented growth of YBa2Cu3O7−y films on LaSrGaO4(100) substrates (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 61 (1992), S. 1134-1136 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have grown a-axis oriented YBa2Cu3O7−y (YBCO) films on LaSrGaO4 (LSGO) (100) substrates with (100) oriented seed layer of PrBa2Cu3O7−x (PBCO) using a pulsed laser deposition technique. PBCO films on LSGO (100) deposited even at ∼800 °C exhibits the a-axis orientation. In this temperature range, PBCO films on SrTiO3 (100) substrate exhibits the c-axis orientation. The YBCO film with a-axis orientation was grown on this PBCO(100) layer at a wide range of 650–800 °C. The YBCO films on PBCO free substrates have, on the other hand, c-axis orientation normal to the surface of the LSGO (100). We found that the preferred orientations of YBCO thin films can be controlled by the presence of PBCO films on LSGO substrate. For the a-axis orientated YBCO films, the resistance perpendicular to the c axis is 1/2 of that parallel to the c axis, suggesting the preferred orientation of c axis along the surface. The zero resistance superconducting transition temperature (Tc) of the films on the LSGO (100) and PBCO (100)/LSGO (100) substrates are 88.0 and 89.0 K, respectively.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.107692
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  • 16
    Electronic Resource
    Electronic Resource
    LaSrGaO4 substrate gives oriented crystalline YBa2Cu3O7−y films (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 2886-2888 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: As-grown YBa2Cu3O7−y (YBCO) thin films of 70 nm thickness have been prepared on LaSrGaO4(001), (100), and (110) single-crystal substrates at 700 °C using ArF laser ablation deposition. The c-axis oriented thin films with smooth surface morphology are obtained on LaSrGaO4 (001) and (100) substrates. The zero resistance temperatures (Tc) of the films on the (001) and (100) substrates are 90.0 K, and 88.1 K, respectively. On the (110) substrate, (110) YBCO planes grow epitaxially. The resistance perpendicular to the c axis in this film is 1/3 of that parallel to the c axis, showing Tc⊥=85.9 K and Tc(parallel)=84.4 K, respectively. These results suggest that a LaSrGaO4 substrate having a low dielectric constant is an excellent substrate for the epitaxial growth and device application of high-Tc YBa2Cu3O7−y superconducting films.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.105842
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  • 17
    Electronic Resource
    Electronic Resource
    Lectin binding and expression of blood group-related antigens in carcinoma-in-situ and invasive carcinoma of urinary bladder (1993)
    Oxford, UK : Blackwell Publishing Ltd
    Histopathology 23 (1993), S. 0 
    Details
    ISSN: 1365-2559
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: To determine whether histochemical reactivities of carcinoma-in-situ of the urinary bladder differ from those of invasive transitional cell carcinoma, we tested a profile of eight different lectins and three antibodies directed against blood group-related antigens for 15 cases of carcinoma-in-situ and 26 cases of non-papillary (6 superficially and 20 deeply) invasive transitional cell carcinoma that had been diagnosed according to the histopathological criteria of the International Union against Cancer. For biotin-labelled lectins and monoclonal antibodies to mouse blood group-related antigens, the avidin–biotin peroxidase complex method was applied. Positive histochemical reactions of peanut agglutinin without neuraminidase treatment—PNA N(–)—in the 20 deeply invasive tumour cases were significantly higher than those in the 15 carcinoma-in-situ cases (P〈0.05). In contrast, the reactions of blood group-related antigens in the 20 deeply invasive tumour cases were significantly lower than those in the 15 carcinoma-in-situ cases or the 11 normal controls (P〈0.05). The results confirm previously reported studies of the staining of PNA N(–) and blood group-related antigens on carcinoma-in-situ and invasive tumours of urothelial organs. The application of lectins and blood group-related antigens to the histopathology of urinary bladder cancer may be helpful in the differential diagnosis of carcinoma-in-situ from invasive cancer, but neither PNA N(–) nor blood group-related antigens can be solely reliable in this.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1365-2559.1993.tb00473.x
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  • 18
    Electronic Resource
    Electronic Resource
    Structure of 6-(4-n-propoxybenzoyloxy)flavone (1991)
    Oxford [u.a.] : International Union of Crystallography (IUCr)
    Acta crystallographica 47 (1991), S. 1120-1122 
    Details
    ISSN: 1600-5759
    Source: Crystallography Journals Online : IUCR Backfile Archive 1948-2001
    Topics: Chemistry and Pharmacology , Geosciences , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1107/S0108270190011076
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  • 19
    Electronic Resource
    Electronic Resource
    Structures of two indolactams (1993)
    Copenhagen : International Union of Crystallography (IUCr)
    Acta crystallographica 49 (1993), S. 769-773 
    Details
    ISSN: 1600-5740
    Source: Crystallography Journals Online : IUCR Backfile Archive 1948-2001
    Topics: Chemistry and Pharmacology , Geosciences , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1107/S0108768193001806
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  • 20
    Electronic Resource
    Electronic Resource
    Roles of the blocking layer in high temperature copper-oxide superconductors (1993)
    Springer
    The European physical journal 90 (1993), S. 387-392 
    Details
    ISSN: 1434-6036
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract Roles of the blocking layer that we named the layer which separates Cu−O2 layers more than 6Å have been studied by comparing two kinds of highT c copperoxide superconductors such as Bi(2212) and La(2126) compound. These following results have been obtained. The hole concentration decreases when Sr is substituted by La and increases when Bi is substituted by Pb in Bi(2212), and it can be optimized by these substitution. In La(2126)T c becomes up to 43K and the hole concentration (p;[Cu−O]+p) increases to 0.09 by the substitution of Ca for La and heat treatment under high oxygen partial pressure. The distance between Cu−O2 layers in both Bi(2212) and La(2126) are not changed by these substitution and heat treatment. We have found that the blocking layer has not direct roles for the maximumT c value of the material though by supplying carriers to Cu−O2 layers, it affects the actualT c value.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01308817
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