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  • Electronic Resource  (2)
  • 1990-1994  (2)
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  • Electronic Resource  (2)
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  • 1
    Electronic Resource
    Electronic Resource
    Growth of epitaxial TiN films on MgO(100) by high current discharge plasma (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 5663-5667 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High current discharge plasma produced by the Ta-LaB6 cathode was used for ion plating of TiN films. The dependence of the deposition rate of TiN on the substrate dc bias potential was measured using the Rutherford backscattering spectrometry (RBS) method. The results indicate that the particles impinging on the substrate, i.e., vaporized particles (Ti) and reactive gases (N2), could be ionized at high efficiency of 70%. Epitaxial TiN films were grown at temperatures between 400 and 700 °C on cleaved MgO(100) substrate supplied with negative dc anf rf potential. Structures of the epitaxial film were investigated by RBS and ion channeling, and scanning tunneling microscope (STM). The minimum channeling yields for (100) and (110) axes obtained at a substrate temperature of 550 °C with the growth rate of 40 A(ring)/s were found to be 1.4% and 2.0%, respectively, which were almost the same as that of the MgO substrate. Atomically resolved tunneling images of (100) surface of the epitaxial TiN film were observed by STM.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351915
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Computer simulation of dose effects on composition profiles under ion implantation (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 7289-7294 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Here is presented a computer code "dynamic sasamal,'' which has been developed to simulate the dose dependence of concentration profiles and sputtering yields under ion implantations. The model calculations have been applied for high dose implantations of 50-keV nitrogen into zirconium and aluminum. The results are compared with composition profiles obtained by Rutherford backscattering spectrometry (RBS) and with semiempirical values. In the case of Zr, agreements between calculated composition profiles and experimental profiles obtained by RBS analysis were excellent for all fluences up to 1018 ions/cm2 and the calculated sputtering yield decreased toward the semiempirical value with the increase of the fluence. In the case of Al, for fluences up to 7.5×1017 ions/cm2, the composition profiles obtained by RBS measurements agreed well with the calculated results, but for a fluence of 1×1018 ions/cm2, the measured profile deviated from the calculated one; while the calculations assume a saturation concentration equal to the saturated nitride phase, nitrogen concentrations of 55% were measured within the mean ion range.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349776
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    Paper (German National Licenses)
    Fulltext
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