ISSN:
1089-7623
Source:
AIP Digital Archive
Topics:
Physics
,
Electrical Engineering, Measurement and Control Technology
Notes:
A practical thermal oxidation system used in ultradry, ultrathin silicon oxide film growth is described. It comprises a double-wall-type fused-quartz reactor, a newly designed material-gas preheating unit, and three vacuum chambers for dehydrating and exchanging wafers. The preheating unit, used to eliminate temperature disturbances in the reactor, is assembled with a SiC composite shrouded by fused quartz and an infrared lamp heater. The temperature of material gases is quickly elevated to about 600 °C by passing them through this unit just before reaching the reactor's gas inlet. Consequently, the temperature of Si wafers in the reactor can be precisely controlled within ±0.15° at 800 °C. Moreover, the moisture concentration (humidity) in the reactor is always kept below 1 ppb. By rigorously controlling the growth temperature and ambience, high-reliability 5.0±0.05-nm-thick oxide films are obtained.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.1144528
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