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  • 1
    Electronic Resource
    Electronic Resource
    Biochemical and Autoradiographic Study of Cerebral Protein Synthesis with [18F]- and [14C]Fluorophenylalanine (1988)
    Oxford, UK : Blackwell Publishing Ltd
    Journal of neurochemistry 50 (1988), S. 0 
    Details
    ISSN: 1471-4159
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: Fluorine-18-labeled ortho or para isomers of l-fluorophenylalanine were used in double-label experiments together with l-[3H]phenylalanine for amino acid incorporation into cerebral proteins of Mongolian gerbil brain. It was demonstrated by qualitative regional comparison of the 18F and 3H autoradiographic images that l-p-[18F]fluo-rophenylalanine is incorporated into proteins and exhibits a regional cerebral protein synthesis pattern. To a minor extent, l-p-fluorophenyl[3–14C]alanine and l-o-[18F]fluo-rophenylalanine are hydroxylated in vivo to form labeled tyrosine or tyrosine analogues that are incorporated into cerebral proteins as well. The advantage and validity of the application of l-p-[18F]fluorophenylalanine with positron emission tomography for noninvasive studies of cerebral protein synthesis in humans are evaluated on the basis of an experimental animal approach.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1471-4159.1988.tb03007.x
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  • 2
    Electronic Resource
    Electronic Resource
    Polarization-dependent gain-current relationship in (111)-oriented GaAs/AlGaAs quantum-well lasers (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 297-302 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Detailed measurements of polarization-dependent gain-current characteristics have been carried out on (111)- and (100)-oriented GaAs/AlGaAs single-quantum-well lasers by using Hakki and Paoli's method. Polarization-dependent gain-current characteristics have been found to strongly depend on the well width and the quantization direction. The saturation of gain with the injection current and the width of the gain spectrum depends on the well width, and they are also affected by the transition between the higher-order subbands. Experimental results of polarization-dependent spontaneous emission are also presented. The simple selection rule and the effective-mass theories do not quantitatively account for the experimental results.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341426
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  • 3
    Electronic Resource
    Electronic Resource
    Iron nitride thin films prepared by facing targets sputtering (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 3230-3232 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The iron nitride thin films have been deposited using a facing targets sputtering (FTS) system and a conventional dc diode magnetron sputtering system, and their crystallographic characteristics and magnetic properties have been investigated. The total gas pressure (PN2+PAr) was set at 2 mTorr. The films deposited by the FTS system without heating the substrate at PN2 below 0.3 mTorr possessed α-Fe-like structure with an increased lattice constant. At PN2 of around 0.5 mTorr, a two-phase mixture of α-Fe and Fe2–3N was formed in the films prepared in the FTS system, while ζ-Fe2N phase was formed in the films prepared by dc magnetron sputtering. The films prepared by FTS at PN2 of 0.1 mTorr possessed α-Fe and γ'-Fe4N structures when a substrate temperature (Ts) was in the range from 80 to 300 °C. The films deposited at Ts of about 150 °C possessed a saturation magnetization (Ms) of about 1700 emu/cm3, which is larger than that of pure iron films and coercivity (Hc) of about 1.5 Oe.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.340851
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  • 4
    Electronic Resource
    Electronic Resource
    Computer simulation model of the effects of interface states on high-performance amorphous silicon solar cells (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 550-560 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A computer simulation model of amorphous silicon solar cells using a Scharfetter and Gummel solution of Poisson's equation and Taylor and Simmons occupancy statistics for the dangling bond gap states (D states), has been developed. With a suitable choice of parameters, the numerical results for solar cell collection efficiency and dark and illuminated I-V characteristics agree well with experimental values. The model has been used specifically to study the influence of interface states at the TCO-p (transparent conductive oxide), p-i, i-n, and n-metal interfaces and to explain the beneficial role of a graded-band-gap layer at the p-i interface.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.340085
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  • 5
    Electronic Resource
    Electronic Resource
    ac impedance measurement of environmental water in adhesive interfaces (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 3192-3201 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An in situ method based on interfacial electrical impendance measurements is described for following the time-dependent intrusion of water in an adhesive interface that is exposed to a humid environment. Water ingress is measured by its effect on bulk and interfacial conductivity, while regions of liquid water are identified by the presence of aqueous double-layer capacitances. Preliminary measurements are made using aluminum triple-track electrodes to study the environmental stability of adhesion between oxidized silicon (SiO2, 4% P) substrates and three coating materials (RTV silicone, amine-cured epoxy, and mercaptan-cured novolac epoxy) at 80 °C and 94% relative humidity. Moisture-induced changes in conductivity of all coatings are measured, and the presence of condensed water in the mercaptan-cured epoxy interface is clearly identified. Based on static potential field calculations, a modified experimental procedure is outlined that can be used to quantitatively isolate interfacial conduction processes from ac conduction in bulk substrate and coating phases. By indicating the state and quantity of interfacial moisture, capacitance and conductance measurements will allow interface displacement processes to be monitored.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.344158
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  • 6
    Electronic Resource
    Electronic Resource
    Energy-band structure of (AlAs)(GaAs) superlattices (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 1729-1732 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The energy-band structure of (AlAs) (GaAs) short-period superlattices (SLs) has been investigated by using photoluminescence and photoluminescence excitation spectroscopy. In the indirect transition region, both direct and indirect transitions are simultaneously observed and the band structure is elucidated. Indirect-direct crossover occurs in the region of 15–18 A(ring) GaAs thickness for SLs with 10-A(ring) AlAs thickness.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.339909
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  • 7
    Electronic Resource
    Electronic Resource
    Use of a carbon-alloyed graded-band-gap layer at the p/i interface to improve the photocharacteristics of amorphous silicon alloyed p-i-n solar cells prepared by photochemical vapor deposition (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 3071-3076 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Amorphous silicon alloyed p-i-n solar cells have been fabricated using a separate chamber photochemical vapor deposition system. The photocharacteristics of such cells have been modestly improved by the addition of a carbon-alloyed graded-band-gap layer at the p(a-SiC:H)/i(a-Si:H) heterointerface. The best efficiency obtained for a glass/TCO (transparent conductive oxide)/p(a-SiC:H)/i(a-Si:H)/n(μc-Si:H)/metal structure of this type was 11.2% for a 3×3 mm2 cell; other parameters were Voc=0.882 V, Isc=18.05 mA/cm2, and a fill factor (FF) of 0.702.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337806
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  • 8
    Electronic Resource
    Electronic Resource
    High-energy conversion efficiency amorphous silicon solar cells by photochemical vapor deposition (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 3664-3666 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Hydrogenated amorphous silicon solar cells were fabricated by photochemical vapor deposition. A three-separate-chamber system was newly developed to reduce the contamination of the dopant elements as well as oxygen or water originated by the loading and unloading procedure. Wide optical band-gap hydrogenated amorphous silicon carbide was prepared using acetylene (C2H2) for the p layer. The deposition conditions for each layer were optimized and the highest-energy conversion efficiency of 9.64% was obtained. This high conversion efficiency was mainly attributed to the large short-circuit current which indicated that the quality of the i layer is reasonably good.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.335724
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  • 9
    Electronic Resource
    Electronic Resource
    High-purity AlGaAs grown by molecular beam epitaxy using a superlattice buffer layer (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 4452-4454 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High-purity Al0.3Ga0.7As is grown by molecular beam epitaxy at a high substrate temperature using a superlattice buffer layer in order to trap residual impurities. The unintentionally doped layer is p type with p 〈 5×1014 cm−3. Photoluminescence spectra at 10 K showed the strong bound-exciton emission to be 3.8 meV wide and extremely weak emission due to residual C and Si. Photoluminescence spectra of successively grown single-quantum wells with different widths demonstrate that residual C and Si are mainly trapped at the interface of the first-grown well.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.336277
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  • 10
    Electronic Resource
    Electronic Resource
    Low-temperature (600–650 °C) silicon epitaxy by excimer laser-assisted chemical vapor deposition (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 4268-4272 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High-quality Si epitaxial films have been grown at low temperatures of 600–650 °C using an ArF/XeF excimer laser irradiated normal to the substrate. Crystallinity of the deposited films was characterized by reflection high-energy electron diffraction, Rutherford backscattering, Raman scattering, and secondary ion mass spectroscopy measurements. It was found that the laser irradiation on the growing surface was very effective for the improvement of both film crystallinity and electrical properties. A theoretical analysis of heat diffusion was carried out to clarify the effect of laser irradiation on the film quality. It was found that the photothermal effect of laser irradiation was a dominant factor in the improvement of the film crystallinity.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.343311
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