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  • Electronic Resource  (2)
  • 1985-1989  (1)
  • 1970-1974  (1)
  • 1960-1964
  • 1900-1904
  • 21.10.Dr  (1)
  • Chemoreceptor  (1)
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  • Electronic Resource  (2)
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  • 1985-1989  (1)
  • 1970-1974  (1)
  • 1960-1964
  • 1900-1904
Year
  • 1
    ISSN: 1432-0878
    Keywords: Chemoreceptor ; Locusta ; Fine structure ; Development ; Moulting
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology , Medicine
    Notes: Summary The basic structure of the terminal sensilla of Locusta migratoria resembles that of Schistocerca gregaria. There are commonly six or ten neurons whose dendrites extend almost to the opening of the peg. Proximally the dendrites are clothed by a neurilemma cell which also encloses a basal cavity through which their ciliary region passes. The tormogen cell encloses the receptor-lymph cavity and actively secretes material into it. The receptor-lymph cavity and the basal cavity are quite separate. The development of new pegs at a moult is described. After apolysis the scolopale extends across the subcuticular space and protects the dendrites, which remain in a functional condition until shortly before ecdysis. As the trichogen cell grows out to form a new peg the tip is surrounded by a mass of electron-dense material, probably derived from the receptorlymph cavity. The function of this material is unknown. Regeneration of the dendrites is considered. The possible mechanism by which the tip of the peg opens and closes is considered and the general structure of the organule is discussed in relation to functioning.
    Type of Medium: Electronic Resource
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  • 2
    ISSN: 1434-601X
    Keywords: 21.10.Dr ; 25.70.Cd ; 27.30.+t
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract The ground-state masses of35Si and34Si have been measured using the reactions64Ni(36S,35,34Si)65,66Zn at a36S beam energy of 198 MeV.34,35Si14+ ions were analysed and identified in a QMG/2 magnetic spectrometer and gas-filled focal-plane detector. The experimental mass excess of35Si was determined to be −14.58± 0.12 0.07 MeV while that of34Si was measured as −19.961±0.034 MeV. A comparison is made with the results of mass model predictions.
    Type of Medium: Electronic Resource
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