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  • Electronic Resource  (2)
  • 1985-1989  (2)
  • Atomic, Molecular and Optical Physics  (1)
  • Electron paramagnetic resonance and relaxation  (1)
Material
  • Electronic Resource  (2)
Years
  • 1985-1989  (2)
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  • 1
    Electronic Resource
    Electronic Resource
    Springer
    Il nuovo cimento della Società Italiana di Fisica 8 (1986), S. 76-90 
    ISSN: 0392-6737
    Keywords: Electron paramagnetic resonance and relaxation
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Description / Table of Contents: Riassunto I parametri dell’hamiltoniana di spin relativa alla plastocianina, contenente ioni Cu2+ paramagnetici, sono stati determinati mediante simulazione al computer usando un modello teorico che tiene conto della modulazione statistica dei tensorig edA dovuta allo strain. Il modello tiene conto inoltre della corretta esressione da usare per l’intensità EPR nel dominio del campo. Un metodo di simulazione Monte Carlo è stato usato per rappresentare la struttura del solvente attorno al sito attivo della plastocianina. Il quadro d’insieme solvente-biomolecola, ottenuto calcolando le energie di interazione acqua-acqua ed acqua-plastocianina, ci ha permesso di determinare una distanza di 6.7 Å fra lo ione rame e la molecola d’acqua piú vicina.
    Abstract: Резюме С помошью компьютерного моделирования полностью получаются спиновые параметры Гамильтониана дпя парамагнитного пластоцианина, содержащего Cu2+, используя теотическую модель, которая учиывает деформацию, обсловленную статистической модуляцией тензоровg иA. Кроме того, предложенная модель модедь дает правильное выражение для интенсвнхости электронного парамагнитного резонанса в области поля. Для схематического изобважения структуры растворителя около активного узла (содержашего Cu2+) пластоцианина исользуется метод Монте Карло. Структура биомолекулы растворителя, полупенная при вычислении энергий взаимодействий между молекдами «вода-бода» и «вода-пластоцианин», позволяет нам опеделить расстояние 6.7 Å между ионом меди и ближайшей молекулой воды.
    Notes: Summary The spin Hamiltonian parameters of paramagnetic Cu2+-containing plastocyanin have been fully extracted by computer simulation using a theoretical model taking into account the strain-induced statistical modulation ofg andA tensors. The model is, moreover, dealing with the correct expression to be used for the EPR intensity in the field domain. A monte Carlo simulation method was used to sketch the solvent network around the active (Cu2+-containing) site of plastocyanin. The solvent-biomolecule picture, obtained by computing both water-water and water-plastocyanin interaction energies, allowed us to calculate a distance of 6.7 Å between the copper ion and the nearest water molecule.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
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  • 2
    Electronic Resource
    Electronic Resource
    New York, NY : Wiley-Blackwell
    International Journal of Quantum Chemistry 30 (1986), S. 299-311 
    ISSN: 0020-7608
    Keywords: Computational Chemistry and Molecular Modeling ; Atomic, Molecular and Optical Physics
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Chemistry and Pharmacology
    Notes: It is well established that the local density approximation (LDA), which is used in a large majority of all solid state band structure studies, severely underestimates band gaps in nonmetals. Here we describe an extension to semiconductors of the local density theory for quasiparticle self-energies. In contrast to the standard Kohn-Sham procedure' that applies rigorously only to ground state properties, this is a theory for the single-particle-like excitations of semiconductors. This approach includes the energy dependence within a local-density-dependent self-energy that is evaluated in the GW-approximation of Hedin. The essential feature is the incorporation of the semiconducting gap into the screening of the Coulomb interaction, which results in an increased energy dependence of the exchange-correlation hole. The resulting theory gives results for silicon and diamond bandgaps and valence bandwidths that are typically within 5% of the experimental value. Similarly good results are obtained for the zincblende IV-IV compound SiC and III-V compound GaP. Results for the anomalous heavier semiconductors Ge and GaAs, for which LDA gives very small to vanishing gaps, will also be discussed.
    Additional Material: 4 Ill.
    Type of Medium: Electronic Resource
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