ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
A systematic experimental approach has been performed to achieve orientation-controlled nucleation and graphoepitaxial growth of germanium on the replica substrate with a textured single-crystalline silicon (001) surface. The recrystallization of germanium was successfully obtained by scanning a cw argon-ion laser on a germanium/metal eutectic alloy system. It was found that the crystallographic orientation of germanium is strongly dependent on the recrystallization conditions such as laser power, scan direction of laser beam, size of surface relief, and wetting condition to crystallized material. The 〈001〉 directions of the recrystallized germanium are normal to the substrate, and the 〈110〉 directions are parallel to the valleys among the pyramidal relief, i.e., the crystallographic orientation coincides with one of original silicon (001) single crystal. It has been confirmed that the crystallite sizes range from 2 to 10 μm, and the deviation of the [001] crystallographic orientation distribution is less than 7°. A possible growth mechanism of graphoepitaxy is also discussed.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.343788
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