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  • Electronic Resource  (2)
  • 1975-1979  (2)
  • 1970-1974
  • Cs-Ions  (1)
  • Gating mechanism  (1)
Material
  • Electronic Resource  (2)
Years
  • 1975-1979  (2)
  • 1970-1974
Year
  • 1
    Electronic Resource
    Electronic Resource
    Springer
    Pflügers Archiv 370 (1977), S. 185-194 
    ISSN: 1432-2013
    Keywords: Node of Ranvier ; Potassium conductance ; Cation selectivity ; Gating mechanism
    Source: Springer Online Journal Archives 1860-2000
    Topics: Medicine
    Notes: Summary 1. Voltage clamp experiments were carried out on single myelinated fibres of the frog to analyse the changes of the potassium conductance (g K ) resulting from variations of the external K-concentration ([K]0). The use ofg K is justified by the observation that instantaneous K-currents vary linearly withE despite asymmetries between [K]0 and [K]i. 2. At constant membrane potential and for inward going currents,g K increases as a Michaëlian function of [K]0. We propose, therefore, that external K-ions bind specific membrane sites controllingg K . The apparent equilibrium constant (K app ) of the binding reaction decreases with depolarization following a double exponential function. The rate constants of this function depend on the external Ca-concentration. 3. An empirical equation is derived which satisfactorily describes the variation ofg K as a function ofE and [K]0. The fact that either the increase in [K]0 or the membrane depolarization can lead to the opening of the channels is regarded as evidence that the binding of K to specific sites (“K-receptors”) is a necessary step for the formation of conducting channels. The affinity of the receptor-sites for K-ions depends on the electrical field in the membrane. 4. K-free Ringer solutions markedly reduce the steady-state K-current and its rate of activation. These effects are not observed if the lack of potassium is compensated by addition of caesium. It is concluded that Cs can replace K at the sites controlling the formation of the channel. 5. High external concentrations of Cs-ions reduce the inward K-currents when [K]0 is high and tend to increase outward K-currents, especially when [K]0 is low. These results are explained assuming that Cs-ions enter the channel with K-ions moving in single file. They stop the in-moving file when reaching a selectivity structure deeply located in the channel. 6. The fraction of the membrane thickness (δ) at which Cs-ions occupy a blocking position in the K-channel, when K and Cs are present at high concentrations in the external medium, is estimated to be: δ=0.6. From this result, it is deduced that the voltagesensitive K-receptors are located in the external half of the membrane.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
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  • 2
    Electronic Resource
    Electronic Resource
    Springer
    Pflügers Archiv 355 (1975), S. 361-364 
    ISSN: 1432-2013
    Keywords: Node of Ranvier ; Cs-Ions ; Potassium Channel
    Source: Springer Online Journal Archives 1860-2000
    Topics: Medicine
    Notes: Summary Voltage clamp experiments done on nodes of Ranvier show that external application of Cesium blocks the inward but not the outward potassium currents. Internal application of Cs ions reduces the outward K-current and the inward K-current is not affected. These results support the hypotheses that K ions cross the K-channel after dehydration at superficial sites where competition may occur with Cs-ions.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
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