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  • Electronic Resource  (6)
  • 1975-1979  (6)
Material
  • Electronic Resource  (6)
Years
Year
  • 1
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    Journal of the American Chemical Society 97 (1975), S. 4840-4844 
    ISSN: 1520-5126
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    Journal of the American Chemical Society 100 (1978), S. 5008-5011 
    ISSN: 1520-5126
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    Inorganic chemistry 16 (1977), S. 2944-2949 
    ISSN: 1520-510X
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : International Union of Crystallography (IUCr)
    Acta crystallographica 34 (1978), S. 463-472 
    ISSN: 1600-5724
    Source: Crystallography Journals Online : IUCR Backfile Archive 1948-2001
    Topics: Chemistry and Pharmacology , Geosciences , Physics
    Notes: CNDO/2 molecular-orbital calculations are shown to predict trends in bridging angle, ∠T-Y-T, with reasonable accuracy for gas-phase molecules of the type TX3YTX3, where Y is an anion (= O, OH, S, NH) bridging the tetrahedrally coordinated cations T(= C, Si, Al, Be, B) and where X are the nonbridging anions (= H, F). For example, calculated equilibrium ∠T-O-T are 100, 125 and 150° in CH3OCH3, SiH3OCH3 and SiH3OSiH3, respectively, compared to experimental values of 111, 121 and 144°. The equilibrium ∠Si-O-Si in SiH3OSiH3 is also in close agreement with the average value of this angle (148°) in the silica polymorphs. The SiH3YTH3 molecule is proposed as a model system for studying bridging bond angles in silicates and is found to give bridging-angle trends in reasonable agreement with those observed in Si-containing solids. In particular, calculations on SiH3YSiH3 predict LSi-Y-Si to decrease from 150 to 130 to 109° as Y is changed from O to NH to S, in agreement with observed average angles of 144, 120 and 110°, respectively, in silicates, silicon nitrides and silicon sulfides. For SiH3OSiH3 the equilibrium ∠Si-O-Si is calculated to increase as the Si-O bond distance decreases, at a rate within a factor of two of that observed for the silica polymorphs. Calculations on clusters with Be or B replacing Si invariably lead to predicted equilibrium ∠Si -O-T values from 125 to 105°, in accord with the small angles that tend to be observed for such bridge bonds in minerals. Since Si(3d) orbitals are excluded in these calculations, it is apparent that the observed angular trends can be explained without invoking d-p π bonding. Inspection of one and two-center energy components of the CNDO/2 total energy also shows that the form of the Si-T interaction is not that of a nonbonded repulsion.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    Springer
    Physics and chemistry of minerals 2 (1977), S. 21-57 
    ISSN: 1432-2021
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Geosciences , Physics
    Notes: Abstract Extended Hückel molecular orbital theory (EHT) and simple, approximate Self-Consistent-Field MO methods are employed to explain the geometries of nontransition metal bearing minerals and inorganic compounds. The spectra of such minerals and the electronic structure of transition metal oxidic minerals are explained using the Self-Consistent-Field X α MO method. EHT provides an objective algorithm for rationalizing and correlating bond length and angle data for insular and polymerized TO 4 −n tetrahedral oxyanions where T=Be, B, Al, Si, P, S, Ge, As and Se. Calculated bond overlap populations n(T-O), correlate linearly with the observed T-O bond lengths with shorter bonds tending to involve larger n(T-O) values. Such calculations show that n(T-O) is strongly dependent upon the average of the three O-T-O angles associated with a common bond, larger n(T-O) values involving wider angles. Calculations of n(T-O) as a function of the T-O-T angles in T 2O 7 −n ions, indicate that the n(T-O) values for the bonds to the bridging oxygen atoms increase nonlinearly with increasing T-O-T angle whereas those the nonbridging oxygens decrease slightly as the angle widens. In agreement with the experimental data, these results predict that shorter T-O bonds should involve wider O-T-O and T-O-T angles. The SCF-X α MO cluster model is then applied to silica and FeO. The calculations yield a satisfactory interpretation of the visible, UV and X-ray emission and X-ray photoelectron spectra of these materials. Theoretical and empirical MO diagrams are constructed and the electronic structures of the materials are discussed.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    Springer
    Physics and chemistry of minerals 4 (1979), S. 11-21 
    ISSN: 1432-2021
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Geosciences , Physics
    Notes: Abstract CNDO/2 MO calculations on H12Si5O16 clusters modeling silicate tetrahedral linkage in the silica polymorphs show total energy minima at bent SiOSi angles and a correlation between the Si-O bond lengths, d(Si-O), used in the calculation and the minimum energy value of the SiOSi angle. Calculations on hydrogen saturated Si5O16 clusters isolated from the structures of low quartz, low cristobalite and coesite which were adjusted by DLS methods so that all d(Si-O) equal 1.61 Å and all L OSiO equal 109.47° yield Mulliken bond overlap populations, n(Si-O), and Si-O two-center energies, E(Si-O), which correlate with observed bond lengths; shorter bonds involve larger n(Si-O) values and more negative E(Si-O) values.
    Type of Medium: Electronic Resource
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