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  • Electronic Resource  (2)
  • 29.40.Wk  (1)
  • 75.50.Ee  (1)
  • 1
    Electronic Resource
    Electronic Resource
    Springer
    Journal of low temperature physics 93 (1993), S. 641-645 
    ISSN: 1573-7357
    Keywords: 74.50.+r ; 29.40.-n ; 29.40.Wk
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract A new Nb/Al-AlOx-Al/Nb trilayer process using a movable mechanical slit for junction-detector applications is described. Best junctions have a quality factor of 42 mV with a Josephson current density of 1200 A/cm 2 at 4.2 K. The temperature dependence of the sub-gap current in the range of 0.45 to 4.2 K has been measured. Deviations from the thermally activated behavior due to imperfections in the tunneling barrier are observed. We compare our simple method with the usual whole wafer processes and we discuss the influence of proximity effects in these junctions in terms of the models proposed by Golubov et al. and by McMillan.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
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  • 2
    Electronic Resource
    Electronic Resource
    Springer
    The European physical journal 94 (1994), S. 423-429 
    ISSN: 1434-6036
    Keywords: 71.28.+d ; 72.15.Eb ; 75.50.Ee
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract The electrical resistivity ϱ(T) and the thermal conductivity λ(T) have been measured for UCu5 in the temperature range between 0.02 and 20 K. Two distinct anomalies in ϱ(T) are due to previously established phase transitions at approximately 15 and 1 K, respectively. They indicate considerable changes in the electronic structure of this compound, implying sizeable truncations of the Fermi surface with decreasing temperature at both transitions. In almost the entire covered temperature range the thermal conductivity is dominated by phonon contributions. Its temperature dependence is fairly well reproduced by a calculation considering phonon scattering by electrons and by point defects. At very low temperatures, asT approaches 0 K, the Wiedemann-Franz law λ e ρL 0 T, where λ e is the electronic part of λ(T) andL 0 is the Lorenz number, is almost perfectly fulfilled.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
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