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  • 1
    Electronic Resource
    Electronic Resource
    Bogoliubov model with disorder: localization of bosons (1993)
    Springer
    The European physical journal 91 (1993), S. 501-505 
    Details
    ISSN: 1434-6036
    Keywords: 05.30.Jp ; 74.65.+n ; 74.70.Jm
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract For temperature zero the effects of disorder for interacting bosons are considered. The disorder induced superfluid-insulator transition in thed-dimensional disordered Bogoliubov model is discussed. Results for a short-range and a long-range random potential are given. For short-range disorder we argue that ford〈4 arbitrarily small disorder localizes the Bose condensate for vanishing interaction potential. Ford〉4 a certain strength of the disorder potential is necessary in order to localize the condensate. For the three-dimensional Bogoliubov model our results are in agreement with a recent calculation. We compare our theoretical predictions with numerical experiments for a disordered boson Hubbard model.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01316830
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    The conductivity of the spin-polarized two-dimensional electron gas: Exchange/correlation and strong disorder effects (2000)
    Springer
    JETP letters 72 (2000), S. 274-277 
    Details
    ISSN: 1090-6487
    Keywords: 73.50.−h ; 71.30.+h
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract The conductivity of a spin-polarized two-dimensional electron gas is calculated and compared with the conductivity of the unpolarized electron gas. Disorder effects are considered within the self-consistent current relaxation theory, which gives rise to a crossover point from metallic to insulating behavior. Many-body effects due to exchange and correlation are taken into account and are described by a local-field correction. Our calculations are in good agreement with recent experimental results on the magnetoresistance of silicon inversion layers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1134/1.1324027
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Magnetoresistance of a two-dimensional electron gas in a parallel magnetic field (2000)
    Springer
    JETP letters 71 (2000), S. 27-30 
    Details
    ISSN: 1090-6487
    Keywords: 73.50.Jt ; 71.30.+h
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract The conductivity of a two-dimensional electron gas in a parallel magnetic field is calculated. We take into account the magnetic-field-induced spin-splitting, which changes the density of states, the Fermi momentum, and the screening behavior of the electron gas. For impurity scattering, we predict a positive magnetoresistance for low electron density and a negative magnetoresistance for high electron density. The theory is in qualitative agreement with recent experimental results found for Si inversion layers and Si quantum wells.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1134/1.568270
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    Paper (German National Licenses)
    Fulltext
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