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  • Electronic Resource  (3)
  • 81.40  (2)
  • thin film  (1)
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  • Electronic Resource  (3)
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  • 1
    Electronic Resource
    Electronic Resource
    Springer
    Applied physics 28 (1982), S. 99-102 
    ISSN: 1432-0630
    Keywords: 61.70 ; 81.40
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Supersaturated surface alloys produced by very high dose (0.8−2.6×1017cm−2) implantation of As-ions into silicon and subsequent pulsed electron-beam annealing have been investigated by means of the channeling technique. The maximum solubility limit of 7×1021 As/cm3 has been determined. It exceeds the equilibrium solubility limit by more than a factor of 4. Angular scan measurements indicated that for doses above 1×1017cm−2 As atoms are displaced by about 0.12 Å from the regular lattice sites.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Springer
    Applied physics 22 (1980), S. 385-388 
    ISSN: 1432-0630
    Keywords: 61.70 ; 81.40
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The effects of pulsed electron-beam annealing of high-dose As implanted {111} Si single crystals has been studied. The depth distributions and lattice location of the As atoms were obtained using MeV4He+ backscattering and channeling technique. The implantation energy was 100 keV with a total dose of 3.5·1016/cm2. Above the threshold energy of 0.9 J/cm2 the single-crystal transition was observed with about 95% of the As atoms on substitutional lattice sites. This leads to an As concentration of 2·1021/cm3 which was demonstrated to be a metastable one.
    Type of Medium: Electronic Resource
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  • 3
    ISSN: 1572-9605
    Keywords: Superconductor ; thin film ; GdBaCuO
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract Thin films of GdBaCuO (GBCO) have been deposited in situ onto LaAlO3 single crystal substrates by inverted cylindrical sputtering pattern (ICP). The superconductive properties of the thin films' dependence on the substrate temperature and sputtering pressure have been systematically investigated. By optimization of the deposition parameter, high-quality c-axis epitaxial GBCO thin films of T c0〉92 K were reproducibly grown. The T c of the best sample is as high as 93.2 K. Upon changing the target composition to GdBa2Cu4O y (Gd124), it was observed that the samples always show some a-axis oriented films, implying that excess copper would favor a-axis growth in thin films. The superconductivity of the thin films under higher substrate temperature (T s〉800°C) was clearly improved by the procedure of special post-oxygenization at 400°C with an ozone atmosphere. This is very useful for preparing large-area thin films of GBCO.
    Type of Medium: Electronic Resource
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