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  • 1
    Digitale Medien
    Digitale Medien
    Stable field emission with low threshold field from amorphous carbon films due to layer-by-layer hydrogen plasma annealing (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 5434-5437 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The layer-by-layer hydrogen plasma treatment method, alternatively repeating the process of nanometer thickness film deposition and hydrogen plasma chemical annealing, was applied to fabricate amorphous carbon (a-C) films. It was shown that hydrogen plasma treatment reduced the size of sp2 clusters and resulted in the increase of the optical band gap. Consequently, a stable vacuum electron emission with a low threshold field was achieved from layer-by-layer hydrogen plasma annealed a-C films compared with that from conventionally deposited samples. The threshold electric field was as low as 2 V/μm. The improvement of field emission characteristics could be attributed to the large field enhancement effect due to the inhomogeneous distribution of nanometer scale sp2 clusters. © 2002 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.1464211
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  • 2
    Digitale Medien
    Digitale Medien
    Characterization of Mg doped GaN by positron annihilation spectroscopy (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 92 (2002), S. 1898-1901 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Metalorganic vapor-phase epitaxially grown GaN films have been studied using beam positron annihilation spectroscopy. Positron lifetime and Doppler broadening of annihilation radiation measurements indicate that defects, probably Ga vacancies, are reduced in concentration when films are doped with Mg, as previously observed by other workers. In lightly doped films a homogeneous layer with a minimum defect concentration is present from just below the surface, to a depth of around 0.1 μm. For heavily doped films, there is evidence of a further substantial decrease in the defect concentration following an anneal to 900 °C. The effects of impurities and defects are discussed. © 2002 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.1492858
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  • 3
    Digitale Medien
    Digitale Medien
    CN B→X emission in electron-stimulated desorption from alkali halides: Population analysis via nonlinear models (1990)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 93 (1990), S. 5281-5287 
    Details
    ISSN: 1089-7690
    Quelle: AIP Digital Archive
    Thema: Physik , Chemie und Pharmazie
    Notizen: Excitation of crystalline KBr, KCl, and LiF with electrons of energy 60–1000 eV produces weak emission in the 360–420 nm region, identified as the B→ X electronic transition in the CN radical. The emission is attributed to CN molecules that leave the surface of the crystal in their electronically excited B 2Σ+ state. The resulting spectra, which are rotationally unresolved, are analyzed by novel nonlinear fitting procedures to yield information about the vibrational and rotational population distributions. For CN(B) produced via electron-stimulated desorption from LiF, the vibrational populations approximate a temperature of 1500 K, while the rotational abundances can be represented as a sum of two Boltzmann distributions having temperatures of 660 K (81%) and 90 K (19%). For ESD from KBr, the rotational distribution is adequately represented as a single Boltzmann at ∼ 590 K.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.459647
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  • 4
    Digitale Medien
    Digitale Medien
    Full color light emission from amorphous SiCx:H with organic–inorganic structures (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 6408-6412 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Hydrogenated amorphous silicon carbide films with an organic–inorganic compound structure were fabricated by using organic carbon source xylene (C8H10), in a traditional radio frequency plasma-enhanced chemical vapor deposition system. Strong full-color light emission ranging from 630 to 420 nm was observed at room temperature. The results of photoluminescence and photoluminescence excitation experiments showed the emission was originated from the radiative recombination at band tails of the inorganic SiC matrix. Moreover, luminescence from the transition between discrete energy levels, which were associated with organic π-conjugated carbon systems, was also observed at resonant excitation conditions. © 2000 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.1323524
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  • 5
    Digitale Medien
    Digitale Medien
    Preparation of hydrogenated amorphous germanium nitrogen alloys by plasma enhanced chemical vapor deposition (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 4703-4706 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: A series of hydrogenated amorphous germanium nitrogen alloys have been prepared by using plasma enhanced chemical vapor deposition system. The structure, optical and electrical properties have been investigated and compared with the samples produced by reactive sputtering method. It is found that inclusion of nitrogen into a-Ge:H network increases the structural stability and induces the significant changes both in optical and electrical properties. Hydrogenated a-GeN films have also been fabricated by using nitridation and high hydrogen dilution technique. These unique features have been described in this article. © 1996 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.363454
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  • 6
    Digitale Medien
    Digitale Medien
    Study of magnetic reorientation phenomenon and magnetic properties of Pd/(Pt/Co/Pt) multilayers : The 40th annual conference on magnetism and magnetic materials (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 6267-6269 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Pd/(Pt/Co/Pt) modulated multilayer films have been prepared at substrate temperatures ranging from room temperature to 350 °C by e-beam evaporation using various buffer layers. All these films exhibit perpendicular magnetic anisotropy with square polar Kerr hysteresis loops at room temperature. However, we observed a magnetic reorientation from a perpendicular anisotropy to an in-plane anisotropy at temperatures close to the Curie temperature TC. The reorientation temperature TR is found to depend strongly on the nonmagnetic Pd-spacer thickness in these Pd/(Pt/Co/Pt) multilayers. Over the room temperature to TR range, we observe a linear temperature dependence of magnetic coercivity. AFM and STM characterization of the role of buffer layers on the microstructure, the dependence of coercivity and squareness of the Kerr hysteresis loops on the buffer layers of Au, Pt, and Al are also presented. © 1996 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.362032
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  • 7
    Digitale Medien
    Digitale Medien
    Superconducting YBa2Cu3O7−x/Y4Ba3O9 multilayers: Field independent critical current and dimensional crossover (abstract) : The 6th joint magnetism and magnetic materials (MMM)-intermag conference (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 6965-6965 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: A new class of c-axis-oriented YBa2Cu3O7−x/Y4Ba3O9 (YBCO/YBO) multilayer films with YBCO and YBO individual thicknesses ranging from 24 to 156 A(ring) have been fabricated by a single target on-axis biased rf magnetron sputtering technique on LaAlO3 (001) substrates. SQUID dc magnetic measurements reveal a striking feature of magnetic field independent critical current jc(T) from 5 K to almost near superconducting transition Tc. For thin YBCO layer thickness the magnitude of jc is found to decrease as (1−T/Tc)2, and exponentially with the thickness of the isolating spacer YBO. It is distinctly shown that jc(T) in the (a,b) plane is determined by interlayer Josephson current. All the SQUID data for the temperature dependencies of magnetization for a few families of multilayers with thin YBCO layers are shown to scale and collapse into a single universal behavior consistent with a model of "slipped out pancake vortices in Josephson coupled heterostructures.'' On approaching Tc, the characteristics of critical current jc change gradually from the field independent behavior to another dependence similar to an ordinary H−1/2 dependence typical for collective pinning of the vortex lattice in the YBCO single layer film. This suggests that a dimensional crossover takes place when the quantum coherence between individual YBCO layers sets. The crossover temperature is found to depend on the multilayer period and individual thicknesses of superconducting and isolating layers while a linear temperature dependence of jc appears for multilayers with thick YBCO layers.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.358057
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  • 8
    Digitale Medien
    Digitale Medien
    Green electro- and photoluminescence from nanocrystalline Si film prepared by continuous wave Ar+ laser annealing of heavily phosphorus doped hydrogenated amorphous silicon film (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 105-107 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: A thin layer of plasma enhanced chemical vapor deposited (PECVD) heavily phosphorus doped hydrogenated amorphous silicon (a-Si:H) film was annealed by cw Ar+ laser scanning. Different from conventionally prepared polycrystalline Si films, it was found that nanocrystalline Si (nc-Si) was formed in our laser annealed sample. Room-temperature green electroluminescence (EL) peaked at 530 nm was achieved from our nc-Si film. Photoluminescence (PL) from the same sample also shows the 530 nm green peak, in addition to the red peak located at 680 nm. The film had a rather high electrical conductivity of 10S/cm as well. The light emitting and highly conductive nc-Si film provides a new possibility to fabricate optoelectronic devices along with the well-developed laser annealing techniques of a-Si:H. © 1998 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.121782
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  • 9
    Digitale Medien
    Digitale Medien
    Red–green–blue light emission from hydrogenated amorphous silicon carbide films prepared by using organic compound xylene as carbon source (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 13-15 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We fabricated hydrogenated amorphous silicon carbide (a-Si1-XCX:H) films by the plasma-enhanced chemical vapor deposition technique using organic compound xylene (C8H10) as the carbon source, which was initially attempted by W. A. Nevin H. Yamagishi, M. Yamaguchi, and Y. Tawada, Nature 368, 529 (1994). Here we used different preparation conditions from those authors to produce xylene-based a-Si1-XCX:H films, and a different light emission behavior of the films has been observed at room temperature. The light emission wavelength can be shifted from 630 nm to 450 nm by changing the optical band gap (Eopt) of the films from 2.3 eV to 3.5 eV, nearly covering the whole visible light range, which was never reported previously. Fourier transform infrared spectra showed that the configuration of the material was a combination of organic aromatic rings and inorganic SiC networks. © 1998 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.120631
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  • 10
    Digitale Medien
    Digitale Medien
    Microdefects in Al2O3 films and interfaces revealed by positron lifetime spectroscopy (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 3165-3167 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We have studied microdefects and interfaces of Al2O3 films on iron and nickel aluminide substrates using variable-energy positron lifetime spectroscopy. Di-vacancies, vacancy clusters, and microvoids were observed in the oxide scales. Their sizes and distributions were determined by the nature of the process used to synthesize the alumina film, and influenced by the composition of the alloy substrates. For oxide–iron aluminide interfaces, positron lifetimes are longer than those for the alumina layer itself, suggesting a greater defect concentration at such sites. © 1997 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.120278
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