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  • 1
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 107 (1997), S. 2611-2618 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Reactive scattering of hyperthermal Cs ion is examined from a Si(111) surface adsorbed with water. Collision of Cs+ beams with the Si surface at the energy of 10–100 eV produces Cs+-bound cluster ions as scattering products, including CsOH+, CsOH2+, CsSi+, CsSiHn+(n=1,2), and CsSiO+. The yields for these clusters are examined as a function of Cs+ beam energy and water exposure. Kinetic energy distributions for the clusters are measured. The reactive scattering process is explained in terms of collision-induced desorption of adsorbate, followed by ion–molecule association between the scattered Cs+ and the desorbed molecule. The probability that Cs+ undergoes reactive scattering is 5×10−4–2×10−3 for 50 eV collision energy. The corresponding probability for the Cs+–molecule association reaction is in the order of 5×10−3–2×10−2 or slightly lower. It is proposed that CsOH+ and CsOH2+ are formed from OH and H2O adsorbates, respectively, via direct collisional desorption. CsSiO+ formation can be related to desorption of surface oxide species or, at high energy, to collisional dissociation of adsorbates. Several aspects of using Cs+ reactive scattering for surface adsorbate detection are discussed. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    Industrial & engineering chemistry 46 (1954), S. 1409-1412 
    ISSN: 1520-5045
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Process Engineering, Biotechnology, Nutrition Technology
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 1230-1233 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The saturation magnetization, 4πMs, and the magnetostriction constant, λs, of Ni81Fe19, Ni81Fe19/Ta, and Ni72Fe17Rh11/Ta thin films were studied as a function of film thickness before and after annealing at 250 °C in vacuum for 2 h. For films of thickness t〈200 A(ring), 4πMs and λs were found to be strongly dependent on film thickness with an even larger variation after annealing. For all films, at t=60A(ring), 4πMs decreases by 20%–30% compared to bulk value. The value of λs is in the range of 10−6 for all films and shows a complex behavior, including a change of sign, depending on film composition as well as Ta capping. Auger depth profiling of uncapped films has shown the presence of an Fe-rich surface oxide layer whose composition changed and thickness increased after annealing. The composition and thickness of the Ta-film interface layer in the Ta-capped films did not change with annealing. The presence of such layers, at the film surface, Ta-film interface, and film-substrate interface, of different composition and magnetic properties from the film bulk, can explain the observed behavior of 4πMs and λs.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 59 (1986), S. 1319-1322 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The thermal decomposition of disilane (Si2H6) in a hydrogen or helium flow has been used for the deposition of hydrogenated amorphous-silicon (a-Si:H) films on the surface of Corning 7059 glass substrates at 450–500 °C. The reaction product consists of monosilane and trisilane in addition to the unreacted disilane and ethylsilane (the major impurity in commercial disilane). The concentration of Si2H6 in the reaction mixture has been found to strongly affect the deposition rate and the photoconductivity of a-Si:H films. At a given Si2H6 concentration, the deposition rate of a-Si:H films increases exponentially with temperature. At a given substrate temperature, the AM1 conductivity of a-Si:H films increases with increasing Si2H6 concentration and approaches 10−5 Ω cm−1 at Si2H6 concentrations higher than about 4%, and the conductivity ratio in better films is about 105. The conductivities of CVD a-Si:H films have been found to show negligible change under illumination over a period of several days. The optical band gap of a-Si:H films has been determined to be 1.65–1.68 eV. The doping of a-Si:H films with arsenic and boron has been carried out, and their activation energies determined.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 67 (1996), S. 1741-1747 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A highly automatic system with a three-angle rotation mechanism has been designed and constructed to measure several thousand permanent magnet blocks. The system's main features include its high speed, highly automatic measurement, and the ease with which the different size magnet blocks can be installed and removed. This system provides precise and accurate measurements of the three orthogonal magnetic moment components to accurately characterize each block, as deemed necessary to assess the field quality of undulators and wigglers. A three-angle in rotation mechanism, together with a simple mathematical algorithm is used to measure and analyze the magnetic moments of the magnet block. The system includes the Helmholtz coil pair, block holder, the three-degree rotation mechanism, and the control and data acquisition system. A power train system consists of one motor coupled with a nonmagnetic stainless steel for 360° rotation and two motors individually coupled with two groups of nonmagnetic time belts for rotation angles of 0°, 180°, 0°, and 90°. The control system uses a microcomputer together with a stepping motor control card and a digital fluxmeter connected by the general purpose interface bus. The measurement speed of this system is 40 blocks per h. One reference magnet was measured, with those results verifying the long term precision of the order of 0.04% for the easy component and 0.02° for two minor components. The coil-pair geometry factor is calibrated via the voltage-field reciprocity principle, indicating that the system absolute accuracy is around 0.43%. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 65 (1994), S. 2548-2555 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A special theoretical concept involving the harmonic magnetic-field measurement and analysis method using a fixed angle Hall probe was developed at the Synchrotron Radiation Research Center (SRRC) for measuring as well as analyzing the triple bending achromat magnets of the storage ring. The method can be used to simulate the harmonic magnetic-field calculation of the two-dimensional (2D) "magnet'' program. This method has a quite simple mechanism. The Hall plate was fixed at a 0° angle with respect to the horizontal plane of magnet to measure only the vertical field. Additionally, the 2D nonlinear least-square fitting was used to fit the mapping data so as to find the normal and skew multipole field strength. If necessary, the angle of Hall probe could be rotated 90° precisely for measuring the horizontal field. Consequently, the skew dipole field could be obtained. A real-time Hall-probe automatic magnetic-field measurement system was also developed for fulfilling the concept of the harmonic field measurement. Some special mapping trajectories for different kinds of magnets were discussed to match this special theoretical concept with the analysis methodology. This was done so as to obtain the reliable and accurate harmonic field strength. The accuracy and precision of the harmonic field strength measurement and analysis of this method being better than ±0.01% was confirmed by experimental results.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 69 (1998), S. 1230-1235 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: This work designs and implements an inexpensive and simple double-crystal monochromator, which yields a high performance at a bending magnet x-ray beamline. A primary feature of the proposed monochromator is that the offset between the incident and monochromatic exit of the x-ray beam can be adjusted to cover a wide energy range with a short X–Y traveling stroke. Such a short range of X–Y strokes can reduce the monochromator's overall size and, also, increase the stability of motions. Meanwhile, in this monochromator, instead of using a complicated hardware linkage mechanism, a software program is developed to effectively control the X–Y stage for positioning the second crystal in a fixed exit configuration, alleviating mechanic motion errors to maintain the parallelism of the two crystals. The entire software control mechanical linkage offers a relatively inexpensive and simple assembly monochromator that is more flexible than the commercially available one. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 69 (1998), S. 4086-4093 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A cylindrical arrangement of electrodes, together with control electronics, is described that provides uniform electric fields over cm3 volumes in a vacuum, whose angle and magnitude can be switched on a μs time scale. Full 360° field rotation is achieved, and the device allows access for particle or light beams from all sides. Both numerical and analytic descriptions of the general fields are given. Extension to full three-dimensional field control and other variations are described. The device, which was originally designed for crossed-beam collision experiments with keV energy ions and laser-excited Rydberg atoms in field-directed Stark states or coherent-elliptic states, may be more generally useful in atom trapping and cold collisions or in materials and surface science. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 9
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A 4-m-long elliptically polarizing undulator (EPU5.6) device with an Apple-II structure is installed in the Synchrotron Radiation Research Center storage ring. This is the longest EPU device with an Apple-II structure worldwide. The errors of the magnet construction and the assembly process are among the several factors that can degrade the spectral performance. This study describes the mechanical design concept and construction that reduce magnetic field errors to keep high performance of the magnet. The electron orbit distortion in various polarization radiation modes is discussed with reference to a global feedback system and a feed forward table with following gap and phase. The beam dynamic effects are also investigated when the phase and magnetic gap are changed. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 3520-3525 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: NiFe films in the thickness range of 300 A(ring) to 8 μm with excellent magnetic properties and thickness uniformity have been prepared using a newly developed high rate (up to 1000 A(ring)/min) dual ion beam sputtering system. Deposition conditions such as the ion assist voltage, the target orientation and the partial pressure of nitrogen have been optimized to reduce coercivity Hc and stress as well as to improve film adhesion and film thermal stability. The annealing effects on Hc, the anisotropy field Hk, as well as the resistivity of the NiFe films were studied. X-ray diffraction and transmission electron microscopy techniques were used to characterize the microstructures of the films and were correlated with their magnetic properties. These ion-beam sputtered NiFe films have excellent magnetic, electrical, mechanical, and microstructural properties to make them suitable for thin-film head applications.
    Type of Medium: Electronic Resource
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