ISSN:
0268-2605
Keywords:
Metal-organic chemical vapor deposition (MOCVD)
;
precursors
;
titanium
;
vanadium
;
carbonitride
;
Chemistry
;
Industrial Chemistry and Chemical Engineering
Source:
Wiley InterScience Backfile Collection 1832-2000
Topics:
Chemistry and Pharmacology
Notes:
Ceramic thin films containing titanium, vanadium, carbon, oxygen and nitrogen were obtained on steel substrates at 873 K, under nitrogen and helium gases and at low pressure, by chemical vapor deposition (CVD) from two organometallic precursors, CpTiCl2N(SiMe3)2 and Cp2VMe2 (Cp, cyclopentadienyl). Independent TG-DTA-MS and CVD studies of the two precursors showed their ability to co-decompose within compatible temperature and pressure domains. The mechanism of the reactions occurring inside the CVD apparatus was also approached by GC-MS and NMR analyses of the condensed decomposition products. CVD conducted under He gas confirmed that the formation of nitride resulted from the nitrogen atoms of the precursor, but the nitrogen content in the films remained lower than approx. 5%. Higher nitrogen contents (up to 12%) were only obtained when using ammonia as a carrier gas. Both precursors being air- and moisture-sensitive, high-purity CVD equipment was used to reduce oxycarbide formation. © 1998 John Wiley & Sons, Ltd.
Additional Material:
14 Ill.
Type of Medium:
Electronic Resource
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