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  • Electronic Resource  (23)
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  • Electronic Resource  (23)
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  • 1
    Electronic Resource
    Electronic Resource
    Determination of Si self-interstitial diffusivities from the oxidation-enhanced diffusion in B doping-superlattices: The influence of the marker layers (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 1948-1951 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Si self-interstitial diffusivities can be extracted from the diffusive behavior of certain metals (e.g., Au) in an inert annealing ambient or from the diffusion of dopant markers (typically B) under oxidizing conditions. Each type of experiment yields fairly consistent results; however, interstitial diffusivities obtained in these two ways differ greatly. The marker layer experiments rely on the assumption that the presence of the dopant does not disturb the diffusion of the interstitials, and the validity of this assumption is explored. A model of interstitial diffusivity in the presence of B is developed, two extreme cases of the B-atom–interstitial interaction strength are considered, and the predictions of the model are compared with experiments of oxidation-enhanced diffusion in B doping-superlattices. From this comparison it is concluded that trapping of interstitials by B atoms in the markers cannot be responsible for the different values of the Si interstitial diffusivity reported in the literature. Further, it is shown that the presence of the dopant does not perturb the behavior of the Si self-interstitials in the doping-superlattices, i.e., the markers are "unobtrusive'' probes of interstitial behavior. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358828
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  • 2
    Electronic Resource
    Electronic Resource
    Diffusion parameters of indium for silicon process modeling (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 4944-4947 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The diffusion parameters of indium in silicon are investigated. Systematic diffusion experiments in dry oxidizing ambients at temperatures ranging from 800 to 1050 °C are conducted using silicon wafers implanted with indium. Secondary-ion-mass spectrometry (SIMS) is used to analyze the dopant distribution before and after heat treatment. The oxidation-enhanced diffusion parameter [R. B. Fair, in Semiconductor Materials and Process Technology Handbook, edited by G. E. McGuire (Noyes, Park Ridge, NJ, 1988); A. M. R. Lin, D. A. Antoniadis, and R. W. Dutton, J. Electrochem. Soc. Solid-State Sci. Technol. 128, 1131 (1981); D. A. Antoniadis and I. Moskowitz, J. Appl. Phys. 53, 9214 (1982)] and the segregation coefficient at the Si/SiO2 interface [R. B. Fair and J. C. C. Tsai, J. Electrochem. Soc. Solid-State Sci. Technol. 125, 2050 (1978)] (ratio of indium concentration in silicon to that in silicon dioxide) are extracted as a function of temperature using SIMS depth profiles and the silicon process simulator PROPHET [M. Pinto, D. M. Boulin, C. S. Rafferty, R. K. Smith, W. M. Coughran, I. C. Kizilyalli, and M. J. Thoma, in IEDM Technical Digest, 1992, p. 923]. It is observed that the segregation coefficient of indium at the Si/SiO2 interface is mIn(very-much-less-than)1, similar to boron; however, unlike boron, the segregation coefficient of indium at the Si/SiO2 interface decreases with increasing temperature. Extraction results are summarized in analytical forms suitable for incorporation into other silicon process simulators. Finally, the validity of the extracted parameters is verified by comparing the simulated and measured SIMS profiles for an indium implanted buried-channel p-channel metal–oxide–semiconductor field-effect-transistor [I. C. Kizilyalli, F. A. Stevie, and J. D. Bude, IEEE Electron Device Lett. (1996)] process that involves a gate oxidation and various other thermal processes. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363537
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  • 3
    Electronic Resource
    Electronic Resource
    Influence of fluorine implant on boron diffusion: Determination of process modeling parameters (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 3056-3060 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effects of low-dose ion implants with Si+, Ne+, and F+ on the transient enhanced diffusion of B in silicon after annealing at 900 °C for 30 min have been investigated. Processing conditions such as implant dose (3.5×1013 cm−2) and energy (30–60 keV) were chosen to simulate the lightly doped drain implant in a 0.35 μm complementary metal-oxide-semiconductor technology. An epitaxially grown B-doping superlattice is used to extract directly depth profiles of average Si self-interstitial concentration after processing. For Si+ the transient enhanced diffusion of B increases with the energy of the implanted ion. Ne+ implanted with the same energy as Si+ causes more transient enhanced diffusion, while Ne+ implanted with the same range as Si+ causes slightly less. Implantation of F+ enhances the B diffusivity considerably less than Si or Ne implantation. These effects were modeled using simulations of defect diffusion in the presence of traps. A trap concentration of (2.4±0.5)×1016 cm−3 gave good agreement in all situations except F+ implantation, where (6.6±0.6)×1016 cm−3 traps were necessary. It is proposed that this is caused by additional traps for Si interstitials that are related to F+. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358656
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  • 4
    Electronic Resource
    Electronic Resource
    Physical mechanisms of transient enhanced dopant diffusion in ion-implanted silicon (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 6031-6050 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Implanted B and P dopants in Si exhibit transient enhanced diffusion (TED) during annealing which arises from the excess interstitials generated by the implant. In order to study the mechanisms of TED, transmission electron microscopy measurements of implantation damage were combined with B diffusion experiments using doping marker structures grown by molecular-beam epitaxy (MBE). Damage from nonamorphizing Si implants at doses ranging from 5×1012 to 1×1014/cm2 evolves into a distribution of {311} interstitial agglomerates during the initial annealing stages at 670–815 °C. The excess interstitial concentration contained in these defects roughly equals the implanted ion dose, an observation that is corroborated by atomistic Monte Carlo simulations of implantation and annealing processes. The injection of interstitials from the damage region involves the dissolution of {311} defects during Ostwald ripening with an activation energy of 3.8±0.2 eV. The excess interstitials drive substitutional B into electrically inactive, metastable clusters of presumably two or three B atoms at concentrations below the solid solubility, thus explaining the generally observed immobile B peak during TED of ion-implanted B. Injected interstitials undergo retarded diffusion in the MBE-grown Si with an effective migration energy of ∼3.5 eV, which arises from trapping at substitutional C. The concept of trap-limited diffusion provides a stepping stone for understanding the enormous disparity among published values for the interstitial diffusivity in Si. The population of excess interstitials is strongly reduced by incorporating substitutional C in Si to levels of ∼1019/cm3 prior to ion implantation. This provides a promising method for suppressing TED, thus enabling shallow junction formation in future Si devices through dopant implantation. The present insights have been implemented into a process simulator, allowing for a significant improvement of the predictive modeling of TED. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.364452
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  • 5
    Electronic Resource
    Electronic Resource
    The role of the surface in transient enhanced diffusion (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 2302-2304 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The enhanced diffusion of impurities that is seen following ion implantation is rapidly quenched, hence, the name transient enhanced diffusion (TED). The quenching of TED is associated with the annealing of implant damage, either by the diffusion of point defects to the bulk or to the surface. It is variously assumed that either the surface or the bulk is the predominant annealing site. In this work, we explore these assumptions by observing the reduction of TED in a buried marker, when the surface is etched to bring it closer to implanted damage. The results show a considerable reduction in TED with surface etching, demonstrating that the surface plays a key role in annealing implant damage. Numerical modeling allows extraction of the surface recombination length of interstitials at 800 °C. Only a value of 0.1 μm is consistent with the data. All but a very small fraction of implanted interstitials are recombined at the surface with this value. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115133
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  • 6
    Electronic Resource
    Electronic Resource
    Behavior of intrinsic Si point defects during annealing in vacuum (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 1558-1560 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Using B and Sb doped Si(100) doping superlattices (DSL) as tracers of native Si point defect behavior it is shown that vacuum annealing at 810 °C leads to a depletion of Si self-interstitials, with their smallest concentration at the surface, but does not affect the vacancy population. At a fixed depth, the interstitial concentration drops for increasing annealing times; for a given time, the interstitial concentration increases into the sample as a function of depth. Inert anneals of a B-DSL in Ar show flat interstitial profiles. Apparently, the vacuum anneal makes the surface a better sink for interstitials than an inert Ar anneal, leading to an equilibrium interstitial concentration below the value in the bulk and establishing a net outflow of interstitials to the surface. The absence of a response of the vacancy population yields a lower limit on the interstitial-vacancy recombination time of 104 s at 810 °C. Process simulation of this scenario captures the essential trends of the experimental data. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114733
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  • 7
    Electronic Resource
    Electronic Resource
    Diffusion of dopants in B- and Sb-delta-doped Si films grown by solid-phase epitaxy (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 3150-3155 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The diffusion of δ-function-shaped B- and Sb-dopant spikes in thin Si films grown by solid-phase-epitaxy [(SPE), growth of amorphous film by molecular-beam epitaxy (MBE) at room temperature and subsequent regrowth in situ] during annealing in vacuum is compared to diffusion in films grown by low-temperature (LT) MBE. Diffusion temperatures from 750 to 900 °C, and two-dimensional concentrations of 0.7–1.6×1014 cm−2 have been investigated. The diffusive behavior of dopants in SPE films is found to be qualitatively different from that in films grown by LTMBE. This is related to the vacancylike defects that are intrinsic to growth by SPE but not to growth by LTMBE. Dopant profiles widen significantly during SPE regrowth, making the achievement of δ-function dopant spikes impossible. After a vacuum anneal the diffusion coefficients for both n- and p-type dopants are lower in SPE films than the corresponding values in films grown by LTMBE by up to one order of magnitude. The diffused depth profile of the dopant in LTMBE films shows the characteristic deviation from a pure Gaussian that is expected due to the concentration dependence of diffusion, i.e., a flat top and steep shoulders. In contrast, dopant depth profiles of SPE-grown material show after diffusion a central spike and relatively flat shoulders. The width of the central spike is, after an initial transient that it was not possible to resolve, independent of diffusion time and temperature. This indicates that the SPE material is defective, with the defects acting as traps during diffusion.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354583
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  • 8
    Electronic Resource
    Electronic Resource
    Plastic analysis of cylinder oxidation (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 1815-1817 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A plastic flow model is used to calculate the stress generated during thermal oxidation of silicon cylinders. The analysis is used to estimate stress as a function of thickness, radius of curvature, and temperature. The oxidation stress is much lower than previous analyses.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101248
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  • 9
    Electronic Resource
    Electronic Resource
    Nonlinear viscoelastic dilation of SiO2 films (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 151-152 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Oxide dilation in thin films is analyzed using a Voigt viscoelastic model. If stress-dependent viscosity is used to model the dilation, a logarithmic time evolution is predicted. The form of the solution is in agreement with the non-Maxwellian behavior seen in experimental data. The analysis provides an estimate of the critical stress and low-stress viscosity of dry SiO2 films.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101440
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  • 10
    Electronic Resource
    Electronic Resource
    Plastic flow during thermal oxidation of silicon (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 1516-1518 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Is silicon dioxide a viscous liquid or an elastic solid at silicon processing temperatures? Simple calculations using either assumption lead to gross discrepancies with experimental observations. This letter shows that a plastic flow model resolves these discrepancies. Flow develops much sooner than predicted by a linear viscoelastic model. Large deformations (〈5%) are accommodated almost entirely by plastic flow. Small deformations are accommodated either elastically or by plastic flow depending on temperature.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101384
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