Library

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
Filter
  • Electronic Resource  (3)
Source
Material
  • Electronic Resource  (3)
Years
  • 1
    Electronic Resource
    Electronic Resource
    Magnetically filtered low-loss scanning electron microscopy (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 2351-2353 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The resolution of the scanning electron microscope can be improved by mounting the sample in the high-field region of a condenser-objective lens. Low-loss electrons (LLEs) are scattered from the sample with an energy loss of less than a few percent of the incident energy. In the past, LLEs have been collected with a retarding-field energy filter. A way has been found to collect LLEs using a detector located within the magnetic field of the condenser-objective lens which provides the required energy-filtering action. This greatly simplifies the apparatus and makes it possible to obtain LLE images with less tilt of the specimen and with a higher beam energy than before.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102914
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    Cooperative growth phenomena in silicon/germanium low-temperature epitaxy (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 2555-2557 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A series of Si:Ge alloys and structures has been prepared by ultrahigh-vacuum chemical vapor deposition. Alloys of composition 0≤Ge/Si≤0.20 are readily deposited at T=550 °C. Commensurate, defect-free strained layers are deposited up to a critical thickness, whereupon the accumulated stress in the films is accommodated by the formation of dislocation networks in the substrate wafers. A cooperative growth phenomenon is observed where the addition of 10% germane to the gaseous deposition source accelerates silane's heterogeneous reaction rate by a factor of 25. A model is proposed where Ge acts as a desorption center for mobile hydrogen adatoms on the Si[100] surface, accelerating heterogeneous silane pyrolysis by the enhanced availability of chemisorption sites.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100206
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    Low-temperature chemical vapor deposition of high purity copper from an organometallic source (1990)
    s.l. : American Chemical Society
    Chemistry of materials 2 (1990), S. 216-219 
    Details
    ISSN: 1520-5002
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/cm00009a002
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...